Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.11a
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- Pages.64-66
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- 1993
The Growth of Low Temperature Polysilicon Thin Films and Application to Polysilicon TFTs
저온 다결정 실리콘 박막의 성장 및 다결정 실리콘 박막트랜지스터에의 응용
Abstract
The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.
Keywords