Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.11a
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- Pages.55-59
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- 1993
Polycrystalline silicon doping using antimony thin film as doping source
안티몬 박막을 도우핑소스로 찬 다결정실리콘 도우핑
Abstract
In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.
Keywords