Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Consideration on the various phenomena appeared at bonding interface in fusion-bonded silicon wafer pairs

용융접합된 규소 기판쌍에 있어서 접합 계면에 발생하는 제 현상들의 고찰

  • Bhang, J.H. (Dept. of Metallurgical Engineering, Hanyang Univ.) ;
  • Ju, B.K. (Applied Electronics Lab., KIST) ;
  • Oh, M.H. (Applied Electronics Lab., KIST) ;
  • Park, J.W. (Dept. of Metallurgical Engineering, Hanyang Univ.)
  • Published : 1993.07.18
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Abstract

Some interested phenomena, which were appeared near the bonding interface, were investigated by angle lapping and delineation method, SEM, and TEM observations. Voids, defects, material continuity, and interfacial oxide stability were observed and discussed in the fusion-bonded Bi-Si or Si-$SiO_2$/Si wafer pairs.

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