한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1992년도 추계학술대회 논문집
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- Pages.90-93
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- 1992
$N_2O$ 가스에서 형성된 oxynitride막의 전기적 특성
Electricial properties of oxynitride films prepared by furnace oxidation in $N_2O$
- Bae, Sung-Sig (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Seo, Yong-Jin (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Tae-Hyung (Dept. of Electrical Eng., Chung-Ang Univ.) ;
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Kim, Chang-Il
(Dept. of Electrical Eng., Chung-Ang Univ.) ;
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Chang, Eui-Goo
(Dept. of Electrical Eng., Chung-Ang Univ.)
- 발행 : 1992.11.07
초록
In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an
키워드