Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation and Photovoltaic Properties of the CdTe and CdS-CdTe heterojunction

CdTe와 CdS-CdTe 이종접합 제작과 그 광전특성

  • 김성구 (전남대학교 전자공학과) ;
  • 박계춘 (전남대학교 전자공학과) ;
  • 이진 (목포대학교 전기공학과)
  • Published : 1992.11.07
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Abstract

Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

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