Abstract
Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.
