Degradation Mechanism of the ZnO-Varistor Fabricated with the content of a 3-Composition Seed grain

3-성분 종입자법으로 제조된 ZnO-Varistor의 열화기구

  • 장경욱 (광운대학교 대학원 전기공학과) ;
  • 박춘배 (원광대학교 공과대학 재료공학과) ;
  • 이준웅 (광운대학교 공과대학 전기공학과)
  • Published : 1992.05.01

Abstract

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130~270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

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