Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1992.05a
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- Pages.34-38
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- 1992
The dependence of temperature and the effects of RTP annealing of PECVD SiO$_2$ films
PECVD 산화막의 온도 의존성과 RTP 어닐링 효과
Abstract
Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO
Keywords