Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1992.02a
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- Pages.3-10
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- 1992
UV-LASER INDUCED SURFACE REACTION - DESORppTION AND ETCHING
- Murata, Yoshitada (Institute for Solid State Physics, The University of Tokyo)
- Published : 1992.02.01
Abstract
pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7
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