대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

LDD MOSFET의 유효 채널길이 측정법에 관한 연구

A Method for Effective Channel Length Extraction on Lightly Doped Drain MOSFET's

  • 박근영 (고려대학교 전기공학과) ;
  • 허윤종 (고려대학교 전기공학과) ;
  • 이계신 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • 발행 : 1992.07.23
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초록

In this paper, a Hybrid method for an effective channel length($L_{eff}$) on lightly doped drain(LDD) MOSFET's is proposed. In order to investigate the difference of the gate bias and substrate bias defendence of the $L_{eff}$ among various LDD structures, the $L_{eff}$ of the LDD's are extensively examined using simulations and measurement. one group is proposed for conventional MOSFET and the other group Is proposed for LDD MOSFET. It is shown that the $V_{bs}$-dependence of the n-region is different from $V_{gs}$-dependence of it.

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