A Study on the GaAs MESFET Modeling and the Method of Parameter Extraction

갈륨비소 MESFET의 모델링과 파라미터 추출법에 관한 연구

  • 정명래 (한국항공대학 항공전자공학과) ;
  • 김학선 (한국항공대학 항공전자공학과) ;
  • 이형재 (한국항공대학 항공전자공학과)
  • Published : 1991.10.01

Abstract

We briefly compared GaAs MESFET model and s셔요 on the method of parameter extraction for PSPICE simulation. The parameter determined from above method were substituded into a commercial version of PSPICE which supports the hyperbolic tangentent model. The result of simulation is reasonably good at the lower VGS and is significantly fitted overall by optimization.

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