Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Wear out in electrically stressed LCVD silicon nitride films

Laser CVD silicon nitride막의 wear out

  • 김천섭 (고려대학교 전기공학과) ;
  • 권봉재 (고려대학교 전기공학과) ;
  • 김용우 (고려대학교 전기공학과) ;
  • 김성진 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1990.11.17
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Abstract

Recently, it has been reported that the Insulating films deposited by PECVD show some degradation under somewhat high electric field. In this paper, we Introduce silicon nitride films deposited by LCVD, and evaluate the breakdown and wear-out of these films by TDDB test. Further, failure times against electric field are examined and acceleration factors $\gamma$ are obtained for each case. As a result, it is shown that the breakdown and wear-out limitation for these films is improved.

Keywords