Circuit Modeling of Amorphous Silicon Thin Film Transistor

비정질 실리콘 박막 트랜지스터의 회로 해석 모델링

  • Published : 1990.11.17

Abstract

We develop the analytical model of the static and dynamic characteristics of hydrogenated amorphous silicon thin film transistors. It is found out that, compared with the conventional MOS model, our a-Si model has been in better agreement with experimental static and dynamic results. It may be also suggested that our a-Si model is suitable for incorporation into a widely used curcuit simulation.

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