Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1989.11a
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- Pages.122-126
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- 1989
A Study of Titanium and Cobalt Silicide
Titanium과 Cobalt silicide의 연구
- Kim, Sang-Yong (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Yu, Seok-Bin (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Seo, Yong-Jin (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Tae-Hyung (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Chang-Il (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Chang, Eui-Goo (Dept. of Electrical Eng., Chung-Ang Univ.)
- 김상용 (중앙대학교 전기공학과) ;
- 유석빈 (중앙대학교 전기공학과) ;
- 서용진 (중앙대학교 전기공학과) ;
- 김태형 (중앙대학교 전기공학과) ;
- 김창일 (중앙대학교 전기공학과) ;
- 장의구 (중앙대학교 전기공학과)
- Published : 1989.11.25
Abstract
A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with
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