Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The effect of irradiation on the wear out of thin oxide film

얇은 산화막의 wear out에 관한 광 조사 효과

  • Kim, Jae-Ho (Department of Electrical Engineering, Korea University) ;
  • Choi, Bok-Kil (Department of Electrical Engineering, Korea University) ;
  • Sung, Yung-Kwon (Department of Electrical Engineering, Korea University)
  • 김재호 (고려대학교 전기공학과) ;
  • 최복길 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1989.11.25
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Abstract

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

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