Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1989.11a
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- Pages.94-97
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- 1989
A STUDY OF RF IMPEDENCE MEASUREMENT AND ANISOTROPIC ETCHING
건식식각장치에서 임피던스 측정과 비등방성 식각에 대한 연구
- Kim, Jong-Sik (DEPT. OF ELECTRONIC & ELECTRIC ENG. POSTECH.) ;
- Kim, Hung-Rak (DEPT. OF ELECTRONIC & ELECTRIC ENG. POSTECH.) ;
- Kang, Bong-Gu (DEPT. OF ELECTRONIC & ELECTRIC ENG. POSTECH.) ;
- Kwon, O-Dae (DEPT. OF ELECTRONIC & ELECTRIC ENG. POSTECH.)
- Published : 1989.11.25
Abstract
It is shown that fundamental plasma characteristic, which are sheath voltage and ion concentration, can be derived from measuring RF impedence. Plasma characteristics from this simple method are verified by direct measuring, to be reasonable. Using these values a new relation between isotropy and the ratio of sheath voltage to ion concentration is derived. For etch in which
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