Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1989.07a
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- Pages.314-318
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- 1989
ELECTRICAL AND OPTICAL PROPERTIES OF RF SPUTTERED AND Ga-DOPED ZINC OXIDE THIN FILMS
RF Sputter 방법으로 제조한 ZnO:Ga 박막의 전기 및 광학적 특성
- Choi, Byung-Ho (Korea Institute of Energy and Resources.) ;
- Yoon, Kyung-Hoon (Korea Institute of Energy and Resources.) ;
- Song, Jin-Soo (Korea Institute of Energy and Resources.) ;
- Im, Ho-Bin (Korea Advanced Institute of Science and Technology)
- Published : 1989.07.21
Abstract
Thin films of undoped and Ga-doped zinc oxide have been prepared by rf sputtering. The films deposited on substrates, which have a columnar structure with the c-axis perpendicular to the substrate surface, consist of very small crystal grains (500-1000
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