Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1988.05a
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- Pages.84-87
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- 1988
Statistical Analysis of Breakdown Field Distribution of PECVD SiN Films
PECVD SiN 막의 절연파괴 전계분포의 통계적 고찰
- Sung, Yung-Kwon (Dept. Electrical Eng., Korea University) ;
- Han, Joo-Min (Dept. Electrical Eng., Korea University) ;
- Oh, Jae-Ha (Dept. Electrical Eng., Korea University)
- Published : 1988.05.27
Abstract
cIn this paper. we evaluate the breakdown and TDDB characteristics of ammonia free ECVD SiN films which studied widely as a gate insulator to substitute the silicon dioxide because of it's superior film characteristics with the merit of low temperature process. And also, we propose a new statistical model by introduce a dispersion factor in the traditional Weibull statistics. From the comparison of experimental result, and simulation one, try to dock the breakdown mechanism and statistical analysis.
Keywords