A Study on the Relief-type Grating Formation and Diffraction Efficiency of Amorphous (Se, S)-based Thin Films

(Se, S)를 기본으로 한 비정질 박막의 Relief-형격자 형성과 회절 효율에 관한 연구

  • 최대영 (광운대학교 전자재료공학과) ;
  • 박태성 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Published : 1988.10.01

Abstract

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

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