한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

다결정 실리콘을 게이트로 이용한 MOS 소자의 전기적 특성에 관한 연구

A Study on the Electrical Characteristics of Poly-Si Gate MOS Devices

  • 이오성 (중앙대학교 전기공학과) ;
  • 윤돈영 (중앙대학교 전기공학과) ;
  • 김상용 (중앙대학교 전기공학과) ;
  • 장의구 (중앙대학교 전기공학과)
  • 발행 : 1988.10.01
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초록

The capacitance-voltage (C-V) characteristics of poly-Si gate MOS devices fabricated by Low-Pressure Chemical Vapor Deposition (LPCVD) system have been studied. In the case poly-Si gate, work function difference and surface state charge density was found lower than that of Al gate. This fact was identified from the C-V curves that flatband shift was shown small due to the hydrogen gas diffused into oxide in processing of alloy and the annealing effect in processing of poly-Si deposition.

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