Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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CO2 Laser Assisted Recrystallization of Polysilicon Island

CO2 레이저 열처리에 의한 다결정 실리콘 Island의 재결정화

  • Oh, Min-Rok (Dept.of Elec. Eng., Sogang University) ;
  • An, Chul (Dept.of Elec. Eng., Sogang University)
  • 오민록 (서강 대학교 전자 공학과) ;
  • 안철 (서강 대학교 전자 공학과)
  • Published : 1987.07.03
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Abstract

The recrystallization of polysilicon layer deposited on Si was attemped by means of C02 laser annealing. The polysilicon layer was defined in small island patterns ($50{\mu}m{\times}200{\mu}m$) by means of photolithography prior to the annealings. After the annealing an increase of grain size up to about 50um was obtained.

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