대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.501-504
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- 1987
Se-As-Te 광도전막의 특성 및 응용
The electrical and optical properties of Se-As-Te photoconductor and its application
- Park, Sang-Jun (Dept. of Electronics, Kyungpook National University) ;
- Oh, Sang-Kwang (Dept. of Electronics, Kyungpook National University) ;
- Choi, Ku-Man (Dept. of Electronics, Kyungpook National University) ;
- Kim, Ki-Wan (Dept. of Electronics, Kyungpook National University)
- 발행 : 1987.07.03
초록
The photoconductor is made of evaporated amorphous selenium as the base material, doped with arsenic and tellurium to prevent crystallization and to increase the red sensitivity of the amorphous selenium. The four-layered photoconductor of Se-As-Te has good photosensitivity(r=0.9) and high dark resistivity(
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