Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Theoretical Analysis of pH-ISFET Using the Site Binding Model

Site Binding Model을 이용한 pH-ISFET의 해석

  • Seo, Hwa-Il (Dept. of Electronics, Kyungpook National University) ;
  • Lee, Jong-Hyun (Dept. of Electronics, Kyungpook National University) ;
  • Sohn, Byung-Ki (Dept. of Electronics, Kyungpook National University)
  • 서화일 (경북대학교 전자공학과) ;
  • 이종현 (경북대학교 전자공학과) ;
  • 손병기 (경북대학교 전자공학과)
  • Published : 1987.07.03
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Abstract

Theoretical analysis was performed to understand the sensing mechanism of pH-ISFET by using the site binding model. The calculated pH-${\varphi}$ relationship showed good fittings with the experimental results.

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