• Title, Summary, Keyword: withstanding voltage

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Evaluation in Performance of High Voltage Cable for BLU of TFT-LCD by Improvement for Material and Manufactured Process (TFT-LCD BLU용 고압 케이블의 재료특성 및 제조공정 개선을 통한 성능 향상)

  • Chung, Jin-Do;Kim, Jae-Hoon;Koo, Kyung-Wan;Hwang, Seung-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.495-498
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    • 2009
  • To improve the efficiency of the high voltage cable for BLU(backlight unit) of TFT-LCD(Thin Film Transistor-Liquid Crystal Display), the analysis for the trial products(UL3239, UL3633) is conducted by using SEM(scanning electron microscope) and EDX(Energy Dispersive X-ray Spectroscopy). The result that it is possible to accumulate the know-how to about stranding pitch through effective improvement of stranding process. The troubles which are the badness of withstanding voltage and tensile strength etc. are solved by development of excellent material. Furthermore, phenomenon of conductor unfasten in the harness work is solved by improvement of the stranding wire process.

A Study on the Safety Estimation of Wiring Connection Connector Manufactured by Housing Type (하우징 형태(Housing Type)로 제작된 배선 연결 커넥터의 안전성 평가에 관한 연구)

  • Choi, Chung-Seog
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.4
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    • pp.462-466
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    • 2010
  • The purpose of this study is to evaluate the safety of a wire connector fabricated for the effective installation of a lighting fixture including its contact resistance, insulation resistance, withstanding voltage characteristics, etc., and to provide the basis for the analysis and judgment of PL(Product Liability) dispute by presenting a damage pattern due to a general flame and overcurrent. This study applied the Korean Standard (KS) for the incombustibility test of the connector using a general flame and performed an overcurrent characteristics test of the connector using PCITS (Primary Current Injection Test System). The contact resistance of the housing connector was measured using a high resistance meter and the insulation resistance was measured using a multimeter. In addition, a supply voltage of AC 1,500V for testing the withstanding voltage characteristics was applied to both ends of the connector. Measurement was performed on 5 specimens and the measured values were used as a basis for judgment. Since the connector is fabricated in the form of a housing, it can be connected and separated easily and has a structure that allows no foreign material to enter. In addition, since it has a structure that allows wires to be connected only when their polarity is identical, any misconnection that may occur during installation can be prevented. When the incombustibility test was performed by applying a general flame to the connector, it showed outstanding incombustibility characteristics and the blade and blade holder connected to the housing remained firmly secured even after the insulation sheath (PVC) was completely destroyed by fire. In addition, the mechanism of the damaged connecting wire showed a comparatively uniform carbonization pattern and it was found that some residual melted insulation material was attached to both ends. In the accelerated life test (ALT) to which approximately 500% of the rated current was applied, the connector damage proceeded in the order of white smoke generation, wire separation, spark occurrence and carbonization. That is, it could be seen that the connector damaged by overcurrent lost its own metallic color with traces of discoloration and carbonization. The contact resistance of the connector at a normal state was 2.164mV/A on average. The contact resistance measured after the high temperature test was 3.258mV/A. In addition, the insulation resistance after the temperature test was completed was greater than $10G\Omega$ and the withstanding voltage test result showed that no insulation breakdown occurred to all specimens showing stable withstanding voltage and insulation resistance characteristics.

Study on the Evaluation of the Tension and Contact Resistance of a 3 Φ 3 W Plug-In MCCB (3상 3선식 Plug-In MCCB의 인장력 및 접촉저항 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.28 no.4
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    • pp.43-47
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    • 2013
  • The purpose of this paper is to evaluate the performance of a Plug-In MCCB developed for rapid power supply restoration when the MCCB is installed in a power system and to verify its reliability. Since the developed 3 ${\Phi}$ 3 W Plug-In MCCB can be installed on and removed from a bus bar by one touch using a plug housed at the rear, it can be replaced in a short period of time. Therefore, it can quickly respond to the normalization of a power system. When the Plug-In MCCBB is installed on a bus bar, the resistance between each phase and plug was measured to be 0.46 $m{\Omega}$ in average. When the Plug-In MCCB is installed, the tension in the vertical direction was measured to be 112.78 N in average, which is greater than the tension of 50 N specified in the related regulation. The withstanding voltage tests performed 5 times repeatedly by applying 6 kV to the developed Plug-In MCCB for 60 seconds shows good withstanding voltage characteristics. In addition, both the general waterproof test using a water injection method and the insulation resistance analysis using a Mega meter showed good waterproof and insulation characteristics.

Electrical Characteristics of (BaSr)TiO3-based PTCR Devices under the Electric Field

  • Lee, Joon-Hyung;Cho, Sang-Hee
    • Journal of the Korean Ceramic Society
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    • v.39 no.1
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    • pp.16-20
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    • 2002
  • Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

The AC, DC Dielectric Breakdown Characteristics according to Dielectric Thickness and Inner Electrode Pattern of High Voltage Multilayer Ceramic Capacitor (고압 적층 칩 캐패시터의 유전체 두께 및 내부전극 형상에 따른 AC, DC 절연 파괴 특성)

  • Yoon, Jung-Rag;Kim, Min-Kee;Lee, Seog-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.12
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    • pp.1118-1123
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    • 2008
  • High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

Sol-gel Coating of ZrO2 Film in Aluminium Etch Pit and Anodizing Properties (알루미늄 에치피트에 ZrO2 막의 졸-겔 코팅 및 양극산화 특성)

  • Chen, Fei;Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.24 no.5
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    • pp.259-265
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    • 2014
  • $ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

Study on the Causes of Malfunctions of PCBs Applied to the Power Saving Mode of Electrical Systems and its Solution (전기시스템의 절전모드에 적용되는 PCB의 오작동 원인 개선에 관한 연구)

  • Park, Hyung-Ki;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.28 no.3
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    • pp.51-55
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    • 2013
  • The purpose of this study is to find the causes of malfunctions and defective operation of printed circuit boards(PCBs) built into home refrigerators to perform power saving functions. This study performed an electrostatic test of a PCB built-in using an Auto Triggering system; lightning and impulse tests using an LSS-15AX; and an impulse test using an INS-400AX. From the analysis of a secondarily developed product, it was found that electrostatic discharge(ESD) caused more malfunctions and defective operations than electric overstress(EOS) due to overvoltage. As a result of increasing the condenser capacity of the PCB circuit, withstanding voltage was increased to 7.4 kV. In addition, this study changed the power saving mode and connected a varistor to the #2 pin of an IC chip. As a result, the system consisting of all specimens of a finally developed product was operated stably with an applied voltage of less than 10 kV. This study found it necessary to perform quality control at the manufacturing stage in order to reduce the occurrence of electrostatic accidents to IC chips built into a PCB.

Film Properties of TiO2 Made by Activated Reactive Evaporation (활성화 반응으로 제작된 TiO2의 박막특성)

  • Park, Yong-Gwon;Choi, Jae-Ha
    • Journal of the Korean Society for Heat Treatment
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    • v.14 no.3
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    • pp.151-154
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    • 2001
  • $TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

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External Resonant Ignitior for HID Lamps by Using the Transformer (변압기를 이용한 외장형 HID 램프용 공진형 이그니터)

  • Lee, Woo-Cheol
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.11
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    • pp.9-16
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    • 2014
  • The electronic ballast for HID lamps needs high ignition voltage which is consisted of high voltage pulse ignitor. However, In the case of street lamp it is far from a lamp to a ballast, the conventional pulsed high voltage ignitor can not turn on the HID lamps because of reduction of ignition voltage. Therefore, it needs to do the research on a resonant ignition to turn on the HID lamps. However, the resonant circuit which is consisted of LC occurs over current, so the capacity of the ignitor increases. The capacity of the ignitor can be reduced by using the transformer. In this case, the capacitor for resonance is installed to the secondary of the transformer, and the capacitor needs high withstanding voltage. Therefore, it needs to do the research on a resonant ignition to reduce the voltage over the resonant capacitor by dividing the secondary of the transformer.

Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

  • Tu Vo, Nguyen Qui;Choi, Hyun-Chul;Lee, Chang-Hee
    • Journal of Power Electronics
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    • v.16 no.4
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    • pp.1298-1305
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    • 2016
  • This paper presents the development of a short-circuit protection mechanism on a high voltage switch (HVS) board which is built by a series connection of semiconductor switches. The HVS board is able to quickly detect and limit the peak fault current before the signal board triggers off a gate signal. Voltage clamping techniques are used to safely turn off the short-circuit current and to prevent overvoltage of the series-connected switches. The selection method of the main devices and the development of the HVS board are described in detail. Experimental results have demonstrated that the HVS board is capable of withstanding a short-circuit current at a rated voltage of 10kV without a di/dt slowing down inductor. The corresponding short-circuit current is restricted to 125 A within 100 ns and can safely turn off within 120 ns.