• Title, Summary, Keyword: thinning process

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Prediction and optimization of thinning in automotive sealing cover using Genetic Algorithm

  • Kakandikar, Ganesh M.;Nandedkar, Vilas M.
    • Journal of Computational Design and Engineering
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    • v.3 no.1
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    • pp.63-70
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    • 2016
  • Deep drawing is a forming process in which a blank of sheet metal is radially drawn into a forming die by the mechanical action of a punch and converted to required shape. Deep drawing involves complex material flow conditions and force distributions. Radial drawing stresses and tangential compressive stresses are induced in flange region due to the material retention property. These compressive stresses result in wrinkling phenomenon in flange region. Normally blank holder is applied for restricting wrinkles. Tensile stresses in radial direction initiate thinning in the wall region of cup. The thinning results into cracking or fracture. The finite element method is widely applied worldwide to simulate the deep drawing process. For real-life simulations of deep drawing process an accurate numerical model, as well as an accurate description of material behavior and contact conditions, is necessary. The finite element method is a powerful tool to predict material thinning deformations before prototypes are made. The proposed innovative methodology combines two techniques for prediction and optimization of thinning in automotive sealing cover. Taguchi design of experiments and analysis of variance has been applied to analyze the influencing process parameters on Thinning. Mathematical relations have been developed to correlate input process parameters and Thinning. Optimization problem has been formulated for thinning and Genetic Algorithm has been applied for optimization. Experimental validation of results proves the applicability of newly proposed approach. The optimized component when manufactured is observed to be safe, no thinning or fracture is observed.

Preventing a Gate Oxide Thinning in C-MOS process Using a Dual Gate Oxide (Dual Gate Oxide 공정에서 Gate Oxide Thinning 방지에 대한 고찰)

  • Kim, Sung-Hoan;Kim, Jae-Wook;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.223-226
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    • 2003
  • We propose an improvement method for a $\underline{G}ate$ $\underline{OX}ide(GOX)$ thinning at the edge of $\underline{S}hallow$ $\underline{T}rench$ $\underline{I}solation(STI)$, when STI is adopted to Dual Gate Oxide(DGOX) Process. In the case of SOC(System On-a-Chip), the DGOX process is usually used for realizing both a low and a high voltage parts in one chip. However, it is found that the severe GOX thinning occurs from at STI top edge region and a dent profile exists at the top edge of STI, when conventional DGOX and STI process carried out in high density device chip. In order to overcome this problem, a new DGOX process is tried in this study. And we are able to prevent the GOX thinning by H2 anneal, partially SiN liner skip, and a method which is merged a thick sidewall oxide(S/O) with a SiN pull-back process. Therefore, a good subthreshold characteristics without a double hump is obtained by the prevention of a GOX thinning and a deep dent profile.

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Experimental Study on Minimizing Wall Thickness Thinning for Deep Drawing of Circular Shells (원통형 딥드로잉 용기의 벽 두께 감소 최소화에 관한 실험적 연구)

  • Kim, Doo-Hwan
    • Transactions of Materials Processing
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    • v.7 no.4
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    • pp.393-399
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    • 1998
  • For minimizing wall thickness thinning of circular shells, a new stamping technology, the deep draw-ing process combined with ironing is approached and investigated. The design requirements for the deep drawing shells are to keep the optimum wall thickness with max. 10 percent thickness thinning of the initial blank thickness, to make uniform thickness strain distribution for the wall of circular shell and to improve the shape accuracy for the roundness and concentricity. In order to check the validity and effectiveness of proposed work, a sample process design is applied to a circular shell needed for a 4multi-stepped deep drawing. Through experiments, the variations of the thickness strain distribution in each drawing process are observed. Also a series of experiments are performed to investigate optimum process variables such as the geometry of tooling, radius and drawing rate. In particular, the advantage of current approach with ironing is shown in contrast to the conventional deep drawing process. From the results of proposed method, the optimum value of process variables are obtained, which contribute more uniform thickness strain distribution and better quality in the drawn product.

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Adaptive Thinning Algorithm for External Boundary Extraction

  • Yoo, Suk Won
    • International Journal of Advanced Culture Technology
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    • v.4 no.4
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    • pp.75-80
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    • 2016
  • The process of extracting external boundary of an object is a very important process for recognizing an object in the image. The proposed extraction method consists of two processes: External Boundary Extraction and Thinning. In the first step, external boundary extraction process separates the region representing the object in the input image. Then, only the pixels adjacent to the background are selected among the pixels constituting the object to construct an outline of the object. The second step, thinning process, simplifies the outline of an object by eliminating unnecessary pixels by examining positions and interconnection relations between the pixels constituting the outline of the object obtained in the previous extraction process. As a result, the simplified external boundary of object results in a higher recognition rate in the next step, the object recognition process.

Reduction of surface roughness during high speed thinning of silicon wafer

  • Heo, W.;Ahn, J.H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.392-392
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    • 2010
  • In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

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Effect of N2/Ar flow rates on Si wafer surface roughness during high speed chemical dry thinning

  • Heo, W.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.128-128
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    • 2010
  • In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

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A Point Clouds Fast Thinning Algorithm Based on Sample Point Spatial Neighborhood

  • Wei, Jiaxing;Xu, Maolin;Xiu, Hongling
    • Journal of Information Processing Systems
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    • v.16 no.3
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    • pp.688-698
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    • 2020
  • Point clouds have ability to express the spatial entities, however, the point clouds redundancy always involves some uncertainties in computer recognition and model construction. Therefore, point clouds thinning is an indispensable step in point clouds model reconstruction and other applications. To overcome the shortcomings of complex classification index and long time consuming in existing point clouds thinning algorithms, this paper proposes a point clouds fast thinning algorithm. Specifically, the two-dimensional index is established in plane linear array (x, y) for the scanned point clouds, and the thresholds of adjacent point distance difference and height difference are employed to further delete or retain the selected sample point. Sequentially, the index of sample point is traversed forwardly and backwardly until the process of point clouds thinning is completed. The results suggest that the proposed new algorithm can be applied to different targets when the thresholds are built in advance. Besides, the new method also performs superiority in time consuming, modelling accuracy and feature retention by comparing with octree thinning algorithm.

Pipe thinning model development for direct current potential drop data with machine learning approach

  • Ryu, Kyungha;Lee, Taehyun;Baek, Dong-cheon;Park, Jong-won
    • Nuclear Engineering and Technology
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    • v.52 no.4
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    • pp.784-790
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    • 2020
  • The accelerated corrosion by Flow Accelerated Corrosion (FAC) has caused unexpected rupture of piping, hindering the safety of nuclear power plants (NPPs) and sometimes causing personal injury. For the safety, it may be necessary to select some pipes in terms of condition monitoring and to measure the change in thickness of pipes in real time. Direct current potential drop (DCPD) method has advantages in on-line monitoring of pipe wall thinning. However, it has a disadvantage in that it is difficult to quantify thinning due to various thinning shapes and thus there is a limitation in application. The machine learning approach has advantages in that it can be easily applied because the machine can learn the signals of various thinning shapes and can identify the thinning using these. In this paper, finite element analysis (FEA) was performed by applying direct current to a carbon steel pipe and measuring the potential drop. The fundamental machine learning was carried out and the piping thinning model was developed. In this process, the features of DCPD to thinning were proposed.

Development of Drawbead Expert Models for Finite Element Analysis of Sheet Metal Forming Process (Part2: Modeling) (박판성형공정의 유한요소해석을 위한 드로우비드 전문모델 개발 (2부:모델링))

  • 금영탁;이재우;박승우
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • pp.50-54
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    • 1997
  • An expert drawbead model is developed to model a cranky drawbead in the finite element analysis of stamping processes. The expert model calculates the drawbead restraining forces (DBRF's) and bead-exit thinning, which are boundary conditions. DBRF's are calculated by considering bending force, unbending force, and friction force in order. Bead-exit thinning are due to the bending and tension during the deformation. The DBFR's and thinning computed form the mathematical model for the basic beads are compared with measurements and correction factors compensating for the differences are found using the multiple linear regression method. The composition beads are assumed to be a combination of basic beads so that the DBRF's and bead-exit thinning are computed to the sum of those of basic beads.

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SLAM of a Mobile Robot using Thinning-based Topological Information

  • Lee, Yong-Ju;Kwon, Tae-Bum;Song, Jae-Bok
    • International Journal of Control, Automation, and Systems
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    • v.5 no.5
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    • pp.577-583
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    • 2007
  • Simultaneous Localization and Mapping (SLAM) is the process of building a map of an unknown environment and simultaneously localizing a robot relative to this map. SLAM is very important for the indoor navigation of a mobile robot and much research has been conducted on this subject. Although feature-based SLAM using an Extended Kalman Filter (EKF) is widely used, it has shortcomings in that the computational complexity grows in proportion to the square of the number of features. This prohibits EKF-SLAM from operating in real time and makes it unfeasible in large environments where many features exist. This paper presents an algorithm which reduces the computational complexity of EKF-SLAM by using topological information (TI) extracted through a thinning process. The global map can be divided into local areas using the nodes of a thinning-based topological map. SLAM is then performed in local instead of global areas. Experimental results for various environments show that the performance and efficiency of the proposed EKF-SLAM/TI scheme are excellent.