• Title, Summary, Keyword: memory device

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Study on the improvement of Memory-device unification for Point-switch machine (선로전환기용 기억쇠 단일화 개선방안 연구)

  • Lee, Nam-Il;Ko, Yang-Ok;Jung, Ho-Hung
    • Proceedings of the KSR Conference
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    • pp.1440-1444
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    • 2011
  • Memory-device is one of the auxiliary components of point-switch machine; connecting front-rod and tongue-rail. The right side and left side of memory-device are different from each other. When there would be a derailing accident of rolling stock or motor-car, the memory-device properly bends and protects the internal of point-switch machine. Memory-device is one of the important site maintenance spare parts. Memory-device for each of right and left side should be secured so that they can be installed on correct side during an exchange work. This study suggests the development of memory-device with different left and right side and the performance test of it. The study intends to contribute in the convenience improvement of maintenance by improving the unification of memory-device.

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Organic Memory Device with an Organic Memory Layer of Plasma Polymerized Styrene

  • Kim, Hee-Sung;Lee, Han-Chan;Lee, Boong-Joo;Shin, Paik-Kyun
    • Journal of the Korean Physical Society
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    • v.73 no.7
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    • pp.922-927
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    • 2018
  • A floating-gate-type organic memory device was designed and fabricated by modifying a thin-film transistor structure. Thin films of plasma-polymerized methyl methacrylate (ppMMA) and plasma-polymerized styrene (ppS) were prepared for use as the functional thin film in an organic memory device. The ppMMA thin film was utilized as both an insulating and a tunneling layer. Two types of memory layers were utilized: (1) ppS and (2) vacuum evaporated Au. The fabricated devices were examined by using current-voltage measurements made using the double-sweep procedure. The memory window and the retention time of the memory devices were comparatively investigated. The device with the ppS memory layer revealed a memory window of 19 V and showed a retention time of over 2 h. We confirmed that ppS could be utilized as a memory layer for a floating-gate-type organic memory device.

Workpiece-Chucking Device Using Two-Way Shape Memory Alloys: Feasibility Test (양방향성 형상기억합금을 이용한 공작물 척킹장치: 유용성 검증)

  • Shin, Woo-Cheol;Ro, Seung-Kook;Park, Jong-Kweon
    • Journal of The Korean Society of Manufacturing Technology Engineers
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    • v.18 no.5
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    • pp.462-468
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    • 2009
  • In this study, a workpiece-chucking device that generates a chucking force from a shape memory alloy is introduced. This paper first presents train procedure to transform a commercial one-way shape memory alloy into a two-way shape memory alloy, which makes unclamping mechanism of the chucking device simpler than that using the one-way shape memory alloy Second, it describes a conceptual design of the workpiece-chucking device using the two-way type shape memory alloy. Third, it presents a prototype and its chucking characteristics, such as time-response of clamping/unclamping operations and a relationship between temperatures and chucking forces. Finally, it describes a mill-machining test conducted with the prototype. The results confirm that the proposed workpiece-chucking device is feasible for micro machine-tools.

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Nanoscale NAND SONOS memory devices including a Seperated double-gate FinFET structure

  • Kim, Hyun-Joo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • Journal of Applied Reliability
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    • v.10 no.1
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    • pp.65-71
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    • 2010
  • NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer

  • Choe, Jeong-Dong;Yeo, Kyoung-Hwan;Ahn, Young-Joon;Lee, Jong-Jin;Lee, Se-Hoon;Choi, Byung-Yong;Sung, Suk-Kang;Cho, Eun-Suk;Lee, Choong-Ho;Kim, Dong-Won;Chung, Il-Sub;Park, Dong-Gun;Ryu, Byung-Il
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.2
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    • pp.68-73
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    • 2006
  • We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

Resistance Switching Mechanism of Metal-Oxide Nano-Particles Memory on Graphene Layer

  • Lee, Dong-Uk;Kim, Dong-Wook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.318-318
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    • 2012
  • A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

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Recent Advance of Flexible Organic Memory Device

  • Kim, Jaeyong;Hung, Tran Quang;Kim, Choongik
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.38-45
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    • 2020
  • With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

Durability of the Flexible Shape Memory Device (형상 기억 유연 소자의 내구성 평가에 관한 연구)

  • Yang, Hee-Kyung;Kim, Hae-Jin;Kim, Dae-Eun
    • Transactions of the Society of Information Storage Systems
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    • v.11 no.2
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    • pp.36-40
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    • 2015
  • The demand for flexible devices including solar cells, memories and batteries has increased rapidly over the past decades. In most flexible devices, polymer-based materials are used to enable the mechanical deformations such as bending or folding. Shape Memory Polymers (SMPs) is a high molecular compound polymer with flexibility and shape recovery characteristics. In this work, flexible shape memory device was fabricated by simply coating the conducting material, carbon nano-tube (CNT), on a shape memory polymer. Furthermore, durability of the device under various type of mechanical deformations was assessed. It is believed that the result of this work will aid in realization of a stretchable and wearable electronic device for practical applications.