• Title, Summary, Keyword: electrical components

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An Effective Method of Sharing Heterogeneous Components of OPRoS and RTM

  • Salov, Andrey D.;Park, Hong Seong;Han, Soohee;Lee, Dooam
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.755-761
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    • 2014
  • Heterogeneous components have different component models, which prevents such components from sharing the functionalities of other components based on the different models. As one of methods for linking heterogeneous components, this paper suggests a proxy component to construct a bridge between heterogeneous components of OPRoS (Open Platform for Robotic Service) and RTM (Robot Technology Middleware). The proxy component consists of two types of components called Adaptor and Interceptor, via which the heterogeneous components can exchange data and services easily. The proposed method enables adaptor and interceptor components to directly invoke the services of the latter and the former, respectively, in order to exchange data and services on a real-time basis. The proxy component can be implemented for OPRoS and RT (Robot Technology) component models to connect with RT and OPRoS ones, respectively. It is shown through a simple experiment that the proposed method works well for real-time control.

Analysis on the Fire Accident of Vehicle Due to Damage of the Vehicle's Electrical Components (차량 전장부품 손상으로 인한 차량화재 사고사례 분석)

  • Park, Nam-Kyu;Kim, Jin-Pyo;Nam, Jung-Woo;Sa, Seung-Hun;Song, Jae-Yong
    • Journal of the Korean Society of Safety
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    • v.30 no.4
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    • pp.32-38
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    • 2015
  • In this paper, we analyzed the vehicle fire accidents due to damage of vehicle's electrical components, which is applied to a vehicle. In recent development of electrical components technology, approximately 40% of vehicle manufacturing parts have applied electronic circuit technology. Phenomenon such deterioration of insulating performance or electric breakdown on the vehicle's electrical components and printed circuit boards(PCBs) resulted from moisture, contamination and aging due to repetitive operations, lead to the vehicle fire. Therefore, the application of electrical components with adequate electric capacity for vehicle and usage of molding techniques using a non-combustible materials to shut off the oxygen should be applied in order to prevent vehicle fire due to damage of the electrical components and PCBs.

Reliability Evaluation of Power System Operations Considering Time-Varying Features of Components

  • Hu, Bo;Zheng, Ying;Yang, Hejun;Xia, Yun
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1422-1431
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    • 2015
  • The reliability of power system components can be affected by a numbers of factors such as the health level of components, external environment and operation environment of power systems. These factors also affect the electrical parameters of power system components for example the thermal capacity of a transmission element. The relationship of component reliability and power system is, therefore, a complex nonlinear function related to the above-mentioned factors. Traditional approaches for reliability assessment of power systems do not take the influence of these factors into account. The assessment results could not, therefore, reflect the short-term trend of the system reliability performance considering the influence of the key factors and provide the system dispatchers with enough information to make decent operational decisions. This paper discusses some of these important operational issues from the perspective of power system reliability. The discussions include operational reliability of power systems, reliability influence models for main performance parameters of components, time-varying reliability models of components, and a reliability assessment algorithm for power system operations considering the time-varying characteristic of various parameters. The significance of these discussions and applications of the proposed techniques are illustrated by case study results using the IEEE-RTS.

An Analysis of Performance Testing for Metallic Connection Components of Lightning Protection System (피뢰시스템 구성부품 중 금속접속재의 성능시험 및 결과분석)

  • Lee, Ju-Cheol;Lee, An-Ki;Kim, Jae-Chul
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.7
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    • pp.69-74
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    • 2014
  • Recently, IEC published new standards about the requirements and tests for lightning protection system(LPS) components. If components are used for LPS, they should comply with the IEC standards. This paper, we collected six specimens for the metallic connection components using in domestic, and it tested for withstand lightning current which according to the IEC 62561-1. As a result, only one specimen meet this performance requirement. The specimen is the metallic connection component with four bolts fixed. Therefor, when designing of LPS in domestic, the metallic connection components shall be taken into account for the selection of the withstand lightning current. In addition, we need to develop for LPS components product and the national standards.

Least Square Method: A Novel Approach to Determine Symmetrical Components of Power System

  • Rehman, Bilawal;Liu, Chongru;Wang, Lili
    • Journal of Electrical Engineering and Technology
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    • v.12 no.1
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    • pp.39-44
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    • 2017
  • This paper proposes a novel approach to determine symmetrical components of power system by applying method of least squares in time domain. For the modern power system stability, clearance of faults on high voltage transmission lines in zero response time is crucial and important. Symmetrical components have a great attention since last century. They have been found an effective tool for the analysis of symmetrical and unsymmetrical faults in power system. Moreover, magnitude of symmetrical components are also used as a caution about faults in system. With rapid changes in technology, Microprocessor assumed to be fastest machine of the modern era. Hence microprocessor based techniques were developed and implemented for last few decades. The proposed technique apply least square method in the computation of symmetrical components which is suitable as an application in microprocessor based monitoring and controlling power system in order to avoid cascading failures. Simulation of proposed model is carried out in MATLAB/SIMULINK and all results exploit the validity of model.

Harmonics Reduction in the High-Speed Synchronous Reluctance Motor by Space-Vector PWM Control

  • Oh, Sung-Up;Kim, Min-Tae;Seong, Se-Jin;Paek, Tong-Ki
    • Proceedings of the KIPE Conference
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    • pp.758-762
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    • 1998
  • Many harmonics components are contained within the stator currents of the high-speed synchronous reluctance motor, SynRM, with salient pole rotor. They cause the power factor of SynRM to get worse. In this paper, the mathematical model of SynRM is investigated, and SV_PWM control method is applied to reduce harmonics components in the stator current. Simulation results show the fast response of speed and the reduction of harmonics components at steady state.

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Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok;Lee, Jeong-Min;Lee, Jong-Ho;KoPark, Sang-Hee;Yoon, Sung-Min;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • ETRI Journal
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    • v.31 no.6
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    • pp.660-666
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    • 2009
  • We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

Evaluation of Material Degradation Using Electrical Resistivity Method (전기비저항법을 이용한 재료열화 평가)

  • Seok, Chang-Seong;Kim, Dong-Jung;Bae, Bong-Guk
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.24 no.12
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    • pp.2995-3002
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    • 2000
  • The remaining life estimation for the aged components in power plants as well as chemical plants are very important beacuse mechanical properties of the components are degraded with time of service exposure in high temperature. Since it is difficult to take specimens from the operating components to evaluate mechanical properties of components nondestructive techniques are needed to estimate the degradation. In this study, test materials with 4 different degradation levels were prepared by isothermal aging heat treatment at 630$\^{C}$. And the DC potential drop method and destructive methods such as tensile, K(sub)IC and hardness tests were used in order to evaluate the degradation of 1-Cr-1Mo-0.25V steels. The objective of this study is to investigate the possibility of the application of DCPD method to estimated the material degradation, and to analyse the relationship between the electrical relationship between the electrical resistivity and the degree material degradation.

MOSFET Characteristics with Channel Variation fabricated by $0.35-{\mu}m$ Process ($0.35{\mu}m$공정을 이용하여 제작된 MOSFET의 채널 변화에 따른 특성연구)

  • Kang, Jung-Han;Ahn, Min-Su;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.47-48
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    • 2006
  • In this paper, intrinsic n channel MOSFETs with external parasitic components are modeled. Using sensitivity analysis, effective parasitic components are tested and the optimized model is extracted. The extracted model is fitted to the measured S-parameters with different channel width. Based on this methodology, this method, external parasitic components that affect MOSFET operations can be analyzed and modeled.

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High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

  • Lee, Jong-Min;Min, Byoung-Gue;Ju, Cheol-Won;Ahn, Ho-Kyun;Lim, Jong-Won
    • Current Applied Physics
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    • v.17 no.2
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    • pp.157-161
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    • 2017
  • The high temperature storage (HTS) effects on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The step-temperature storage tests in the temperature range from $150^{\circ}C$ to $325^{\circ}C$ were performed to evaluate the reliability of device. It was shown that the electrical properties of devices were remarkably changed as temperature increases. The values of the saturation current and the transconductance ranged from 187 mA to 299 mS/mm (fresh device) to 149 mA and 246 mS/mm (after HTS at $325^{\circ}C$), respectively. In addition, the threshold voltage was shifted in a positive position and the leakage current was significantly decreased. In order to analyze the fundamental mechanisms of device degradation, we investigated the ohmic contact reliability by the transmission line model and analyzed the gate diode characteristics to estimate the diode parameters. It was found that Ti/Al/Ni/Au ohmic contact were stable and showed good thermal performance, but the Schottky contact was more sensitive to the HTS test. Failure analysis using electrical characterization of the gate diode and TEM/EDX cross-section revealed that the gate metal diffusion phenomenon was main degradation mechanism. During HTS test, Ni diffused out from the metal-semiconductor interface and Au formed a Schottky contact on AlGaN layer. To suppress the gate deformation, we adopted the optimum passivation and demonstrated its effect on the device reliability. By comparing the behavior of gate during HTS test, we clarified that the optimum passivation could suppress the diffusion related degradation mechanism and increase the reliability of AlGaN/GaN HEMTs.