• Title, Summary, Keyword: contact resistance

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Normalized Contact Force to Minimize "Electrode-Lead" Resistance in a Nanodevice

  • Lee, Seung-Hoon;Bae, Jun;Lee, Seung Woo;Jang, Jae-Won
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2415-2418
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    • 2014
  • In this report, the contact resistance between "electrode" and "lead" is investigated for reasonable measurements of samples' resistance in a polypyrrole (PPy) nanowire device. The sample's resistance, including "electrode-lead" contact resistance, shows a decrease as force applied to the interface increases. Moreover, the sample's resistance becomes reasonably similar to, or lower than, values calculated by resistivity of PPy reported in previous studies. The decrease of electrode-lead contact resistance by increasing the applying force was analyzed by using Holm theory: the general equation of relation between contact resistance ($R_H$) of two-metal thin films and contact force ($R_H{\propto}1/\sqrt{F}$). The present investigation can guide a reliable way to minimize electrode-lead contact resistance for reasonable characterization of nanomaterials in a microelectrode device; 80% of the maximum applying force to the junction without deformation of the apparatus shows reasonable values without experimental error.

The Electrical properties of Al/TiN/Ti Contact at Submicron contact(2) (Al/TiN/Ti 전극의 Submicron contact에서의 전기적특성(2))

  • Lee, C.J.;Eum, M.J.;Ra, Y.C.;Kim, S.J.;Sung, M.Y.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • pp.1069-1071
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    • 1995
  • The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.

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Analysis of Electrical Contact Resistance Model in Multi-Contact of Tribological Elements (트라이볼로지 기소의 멀티접촉에서 전기접촉저항 모델해석에 관한 연구)

  • 김청균
    • Tribology and Lubricants
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    • v.12 no.4
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    • pp.52-59
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    • 1996
  • The results of the electrical contact conductivity of multi-contact spots accounting the surface roughness and the non-conductive films of different origins such as air, water, cutting oil, and machining oil are presented. The array of metal spheres compressed between two flat plates has been used for simulation of the contact behavior of multiple contact of solids, under normal loading. Measurement of electrical contact resistance has been made using the equipment providing the adequate accuracy in the range of micro Ohms. The data on electrical contact resistance have been compared with theoretical predictions using the multiple contact model of constriction resistance. The effect of single spot number and array on conductivity of contact has been evaluated. The results of the experiments show that the contact resistance are closely related to the number of loading cycles, form of surface roughness, and presence of non-conductive films that reduce the size of the real electrical contact spots.

Effect of Surface Film and Surface Roughness on Contact Resistance (표면막과 표면거칠기가 접촉 저항에 미치는 영향)

  • Lee, HyeonCheol;Lee, Bora;Yu, Younghun;Cho, Youngjoo
    • Tribology and Lubricants
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    • v.35 no.1
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    • pp.16-23
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    • 2019
  • In this study, we aim to analyze the effects of both contact layer properties and surface roughness on contact resistance. The contact has a great influence on performance in terms of electrical conduction and heat transfer. The two biggest factors determining contact resistance are the presence of surface roughness and the surface layer. For this reason we calculated the contact resistance by considering both factors simultaneously. The model of this study to calculate contact resistance is as follows. First, the three representative surface parameters for the GW model are obtained by Nayak's random process. Then, the apparent contact area, real contact area, and contact number of asperities are calculated using the GW model with the surface parameters. The contact resistance of a single surface layer is calculated using Mikic's constriction equation. The total contact resistance is approximated by the parallel connection between the same asperity contact resistances. The results of this study are as follows. The appropriate thickness with reduction effect for contact resistance is determined according to the difference in conductivity between the base layer and surface layer. It was confirmed that the standard deviation of surface roughness has the greatest influence on surface roughness parameters. The results of this study will be useful for selecting the surface material and surface roughness when the design considering the contact resistance is needed.

Effect of Thermal Contact Resistance on Transient Thermoelastic Contact for an Elastic Foundation (탄성기반에서 과도 열탄성 접촉에 대한 열 접촉 저항의 영향)

  • Jang Yong-Hoon;Lee Seung-Wook
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.7
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    • pp.833-840
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    • 2006
  • The paper presents a numerical solution to the problem of a hot rigid indenter sliding over a thermoelastic Winkler foundation with a thermal contact resistance at constant speed. It is shown analytically that no steady-state solution can exist for sufficiently high temperature or sufficiently small normal load or speed, regardless of the thermal contact resistance. However the steady state solution may exist in the same situation if the thermal contact resistance is considered. This means that the effect of the large values of temperature difference and small value of force or velocity which occur at no steady state can be lessened due to the thermal contact resistance. When there is no steady state, the predicted transient behavior involves regions of transient stationary contact interspersed with regions of separation regardless of the thermal contact resistance. Initially, the system typically exhibits a small number of relatively large contact and separation regions, but after the initial transient, the trailing edge of the contact area is only established and the leading edge loses contact, reducing the total extent of contact considerably. As time progresses, larger and larger numbers of small contact areas are established, unlit eventually the accuracy of the algorithm is limited by the discretization used.

Role of edge patterning and metal contact for extremely low contact resistance on graphene

  • Jo, Seo-Hyeon;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.294.2-294.2
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    • 2016
  • Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

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Effects of Thermal Contact Resistance on Transient Thermoelastic Contacts for an Elastic Foundation (시간에 따른 탄성지지 열탄성 접촉에 대한 열접촉저항의 영향)

  • Jang, Yong-Hoon
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • pp.330-333
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    • 2005
  • The paper presents a numerical solution to the problem of a hot rigid indenter siding over a thermoelastic Winkler foundation with a thermal contact resistance at constant speed. It is shown analytically that no steady-state solution can exist for sufficiently high temperature or sufficiently small normal load or speed regardless of the thermal contact resistance. However, the steady state solution may exist in the same situation if the thermal contact resistance is considered. This means that the effect of the large values of temperature difference and small value of force or velocity which occur at no steady state can be lessened due to the thermal contact resistance. When there is no steady-state the predicted transient behavior involves regions of transient stationary contact interspersed with regions of separation regardless of the thermal contact resistance. Initially, the system typically exhibits a small number of relatively large contact and separation regions, but after the initial transient the trailing edge of the contact area is only established and the leading edge loses contact, reducing the total extent of contact considerably. As time progresses, larger and larger number of small contact areas are established, until eventually the accuracy of the algorithm is limited by the discretization used.

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The Electrical properties of Al/TiN/Ti Contact at Submicron contact(1) (Al/TiN/Ti 전극의 Submicron contact에서의 전기적특성(1))

  • Lee, Cheol-Jin;Eom, Moon-Jong;Ra, Yong-Choon;Sung, Man-Young;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1013-1015
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    • 1995
  • The electrical properties of Al/TiN/Ti contact according to post anneal ins conditions are investigated at submicron contacts. $N^+$ contact resistance increases with increasing alloy temperature while $P^+$ contact resistance slightly decreases. The contact tentage current increases wi th increasing alloy temperature for both $N^+$ and $P^+$ contacts. The contact resistance and leakage current of $N^+$ contact increases with increasing alloy tide. $P^+$ contact resistance decreases with increasing alloy time but $P^+$ contact tentage current increases. The contact resistance and contact leakage current increases with increasing alloy cycles for both $N^+$ and $P^+$ contacts.

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Effect of Multiple Contact Spots Simulated by Array of Balls on Contact Resistance (볼군의 다수 접촉점이 접촉저항에 미치는 영향)

  • ;Myshkin,N.K.
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.18 no.11
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    • pp.2967-2972
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    • 1994
  • The multiple character of the contact interaction and the collective behavior of elementary microcontacts play a significant role in all the processes occurring in the surface layers, including the failure due to friction and wear. The array of metal spheres compressed between flat plates has been used for simulation of the contact behavior of multiple contact of solids under normal loading. An experimental design has been made providing regular array of the spheres at the same size with different spatial order. Measurement of electrial contact resistance has been made using the equipment providing the adequate accuracy in the range of micro Ohms. The data on electrical contact resistance have been compared with theoretical predictions using the multiple contact model of constriction resistance. The effect of single spots number and array on conductivity of contact has been evaluated.