• Title, Summary, Keyword: ZnO thin film

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Preparation AZO(ZnO:Al) thin film for FBAR by FTS method (대향타겟스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 전극의 제작)

  • Keum, M.J.;Shin, S.K.;Ga, C.H.;Chu, S.N.;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.172-175
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    • 2003
  • ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

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Crystallographic Properties of ZnO/AZO thin Film Prepared by FTS method (FTS법으로 제작한 ZnO/AZO 박막의 결정학적 특성)

  • 금민종;강태영;최형욱;박용서;김경환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.979-982
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    • 2004
  • The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

Effects of metal catalysts on the characteristics of NO sensor using ZnO thin film as sensing material (금속 촉매가 ZnO 박막을 감지물질로 이용한 NO 센서의 특성에 미치는 영향)

  • Chung, Gwiy-Sang;Jeong, Jae-Min
    • Journal of Sensor Science and Technology
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    • v.19 no.1
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    • pp.58-61
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    • 2010
  • This paper describes the fabrication and characteristics of NO sensor using ZnO thin film by RF magnetron sputter system. The sensitivity, working temperature, and response time of sputtered pure ZnO thin film and added catalysts such as Pt, Pd, Al, Ti on those films were measured and analyzed. The sensitivity of pure ZnO thin film at working temperature of $300^{\circ}C$ is 0.875 in NO gas concentration of 0.046 ppm. At same volume of the gas in chamber, measuring sensitivity of 1.87 at $250^{\circ}C$ was the case of Pt/ZnO thin film. The ZnO thin films added with catalyst materials were showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film.

Conducting ZnO Thin Film Fabrication by UV-enhanced Atomic Layer Deposition

  • Kim, Se-Jun;Kim, Hong-Beom;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.211.1-211.1
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    • 2013
  • We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

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Influence of Oxygen Partial Pressure on ZnO Thin Films for Thin Film Transistors

  • Kim, Jae-Won;Kim, Ji-Hong;Roh, Ji-Hyoung;Lee, Kyung-Joo;Moon, Sung-Joon;Do, Kang-Min;Park, Jae-Ho;Jo, Seul-Ki;Shin, Ju-Hong;Yer, In-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.106-106
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    • 2011
  • Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

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Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance

  • Kim, Sungyoung;Kim, Sangbo;Heo, Jaeseok;Cho, Eou-Sik;Kwon, Sang Jik
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.187-187
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    • 2015
  • The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

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Effect of ZnO buffer layer on the property of ZnO thin film on $Al_{2}O_{3}$ substrate (사파이어 기판 위에 증착된 ZnO 박막 특성에 대한 ZnO 버퍼층의 영향)

  • Kim, Jae-Won;Kang, Jeong-Seok;Kang, Hong-Seong;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.140-142
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    • 2003
  • ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

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A Study of the Crystallographic Properties of $ZnO/SiO_{2}/Si$ Thin Film for FBAR (FBAR 용 $ZnO/SiO_{2}/Si$ 박막의 결정학적 특성에 관한 연구)

  • Keum, Min-Jong;Yun, Youn-So;Choi, Myung-Gyu;Chu, Soon-Nam;Choi, Hyung-Wook;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.140-143
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    • 2002
  • In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

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A Study or the Crystallographic Properties or ZnO/SiO2/Si Thin Film for FBAR (FBAR용 ZnO/SiO2Si 박막의 결정학적 특성에 관한 연구)

  • 금민종;손인환;최명규;추순남;최형욱;신영화;김경환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.711-715
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    • 2003
  • In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

A properties of ZnO thin film deposited by magnetron sputtering and its resistivity and microstructure due to annealing (Magnetron sputtering으로 증착한 ZnO 박막의 특성과 열처리에 따른 비저항과 미세구조)

  • 이승환;성영권;김종관
    • Electrical & Electronic Materials
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    • v.10 no.2
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    • pp.126-133
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    • 1997
  • In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

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