• Title, Summary, Keyword: X-ray Photoelectron Spectroscopy

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Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma

  • Woo, Jong-Chang;Joo, Young-Hee;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.346-350
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    • 2015
  • In this study, we carried out an investigation of the etch characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in adaptive coupled C12/Ar plasma. The maximum etch rate of the TiO2 thin film was 136±5 nm/min at a gas mixing ratio of C12/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

Application of X-ray photoelectron spectroscopy (XPS) in ionic liquids

  • Park, Ju-Yeon;Seo, Cho-Hyeon;Seo, Seong-Yong;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.117-117
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    • 2015
  • Availability of X-ray photoelectron spectroscopy (XPS) for the identification of ionic liquids (ILs) was tested. Commercially available ionic liquids (1-butyl-3-methyl imidazolium tetrafluoroborate ([BMIM] $BF_4$), (1-butyl-3-methyl imidazolium trifluoromethanesulfonate ([BMIM] OTf), (1-butyl-3-methyl imidazolium hexafluorophosphate ([BMIM] $PF_6$), 1-hexyl-3-imidazolium hexafluorophosphate ([HMIM] $PF_6$), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM] $Tf_2N$) were qualitatively and semi-quantitatively analyzed with XPS. In order to confirm whether the results of XPS were correct, conventional method such as a nuclear magnetic resonance (NMR) was performed. After the XPS results were convinced by NMR, we synthesized ILs (1-(4-sulfonic acid) butyl-3-butylimidazolium trifluoromethanesulfonate ([SBBIM] OTf), 1-(4-sulfonic acid) propyl-3-methylimidazolium trifluoromethanesulfonate ([SPMIM] OTf), and 1-(4-sulfonic acid) propyl-3-butylimidazolium trifluoromethanesulfonate ([SPBIM] OTf) and analyzed it with XPS and NMR as well. It was successful the usage of XPS to analyze ILs without any purification processes.

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Thermally Adjusted Graphene Oxide as the Hole Transport Layer for Organic Light-Emitting Diodes (열처리된 그래핀 산화물을 정공주입층으로 이용한 유기발광 다이오드)

  • Shin, Seongbeom
    • Journal of The Korean Society of Manufacturing Technology Engineers
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    • v.24 no.4
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    • pp.363-367
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    • 2015
  • This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.

Deposition of Polytetrafluoroethylene Thin Films by IR-pulsed Laser Ablation (Nd:YAG 레이저에 의한 폴리테트라플루오르에틸렌 박막 증착)

  • Park Hoon;Seo Yu-Suk;Hong Jin-Soo;Chae Hee-Baik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.1
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    • pp.58-63
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    • 2005
  • PTFE (polytetrafluoroethylene) thin films were prepared from the pellets of the graphite doped PTFE via pulsed laser ablation with 1064 nm Nd:YAG laser. The graphite powder converts the absorbed photon energy into thermal energy which is transmitted to nearby PTFE. The PTFE is decomposed by thermal process. The deposited films were transparent and crystalline. SEM (scanning electron microscopy) and AFM (atomic force microscopy) analyses indicated that the film surface morphology changed to fibrous structure with increasing thickness. The fluorine to carbon ratios of the film were 1.7 and molecular axis was parallel with (100) Si-wafer substrate. These results obtained by XPS (X-ray photoelectron spectroscopy), FTIR (fourier transform infrared spectroscopy) and XRD (X-ray diffraction).

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Preparation of Aminosiloxane-grafted Poly(imidesiloxane) Copolymer and its Morphology and Adhesive Properties in Film (아미노실록산이 그래프팅된 폴리(이미드실록산) 공중합체 제조와 필름 모폴로지 및 점착 특성 연구)

  • Lee, Ji Mok;Kwon, Eunjin;Lee, Sunyoung;Jung, Hyun Min
    • Polymer Korea
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    • v.37 no.4
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    • pp.547-552
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    • 2013
  • Polyimide (PI) containing carboxyl functional group was prepared and reacted with diaminosiloxane during high temperature film casting. The morphology of resulting film was observed by using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX), which revealed that globular 100 nm-sized PI domains and continuous polysiloxane phase were formed. X-ray photoelectron spectroscopy (XPS) study indicated that air-film interface mainly consisted of polysiloxane blocks. Poly(imidesiloxane) thin layer was thermostable until $400^{\circ}C$ and its pressure- sensitive adhesive property was retained up to $300^{\circ}C$. The comparative experiments revealed that grafting between carboxyl groups of polyimide and aminosiloxane was crucial for formation of microdomain structure and pressure-sensitive adhesive property.

Titanium Oxide Film : A New Biomaterial For Artificial Heart Valve Prepared by Ion Beam Enhanced Deposition

  • Liu, Xianghuai;Zhang, Feng;Zheng, Zhihong;Huang, Nan
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.1-15
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    • 1997
  • Titanium oxide films were prepared by ion beam enhanced deposition where the films were synthesized by deposition titianium atoms and simultaneously bombarding with xenon ion beam at an energy of 40 keV in an $O_2$ environ,ent. Structure and composition of titanium oxide films were investigated by X-ray Doffractopm (XRD) Ritjerfprd Backscattering Spectroscopy (RBS) and X-ray Diffraction(XRD) Rutherford Backscattering Spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) The results show that thestructure of the prepared films exhibit a rutile phase structure wit high(200) orientation and the O/Ti ratio of the titanium oxide films was about 2:1 XPS anlysis shows that $Ti^{2+},Ti^{3+}\;and\;Ti^{4+}$ chemical states exist on the titanium oxide films. the blood compatibility of the titanium oxide films was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide films improved significantly and better than that of LTI-carbon which was widely used to fabricate artificial heart valve.

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Mössbauer Study of Crystallographic and Magnetic Properties in Vanadium Ferrite(VxFe3-xO4) Thin Films (바나듐 페라이트 박막의 결정구조 및 자기적 성질에 관한 뫼스바우어 분광학적 연구)

  • Park, Jae-Yun;Kim, Kwang-Joo
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.19-23
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    • 2008
  • The mixed ferrite $V_xFe_{3-x}O_4$(x=0.0, 0.15, 0.5, 1.0) thin films were prepared by sol-gel method. Their crystallographic and magnetic hyperfine properties have been studied using X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). The crystal structure is found to be cubic spinel throughout the series($x{\leq}1.0$), and the lattice parameter $a_0$ increases linearly with increasing V content. XRD, XSP and CEMS indicate that $V^{3+}$ substitution for $Fe^{3+}$ in B-site is superior to $V^{2+}$ substitution for $Fe^{2+}$ in B-site. It is noticeable that both quadrupole shift and hyperfine field decreases with increasing V composition, suggesting the change of local symmetry and accompanying line-broadening. The line-broadening on CEMS spectra can be explained by the distribution of magnetic hyperfine fields.

Studies on the etching characteristics of PZT thin films using inductively coupled plasma (고밀도 플라즈마에 의한 PZT 박막의 식각특성 연구)

  • 안태현;김창일;장의구;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.188-192
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    • 2000
  • In this study PZT etching was performed using planar inductively coupled Ar/Cl$_2$/BCI$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$. X-ray photoelectron spectroscopy(XPS) analysis for films composition of etched PZT surface was utilized. The chemical bond of PbO is broken by ion bombardment and Cl radical, and the peak of metal Pb in a Pb 4f narrow scan begins to appear upon etching. As increasing additive BCl$_3$content the relative content of oxygen decreases rapidly in contrast with etch rate of PZT thin film. So we though that the etch rate of PZT thin film increased because abundant B and BCl radicals made volatile oxy-compound such as B$_{x}$/O$_{y}$ and/or BClO$_{x}$ bond. We achieved etch profile of about 80$^{\circ}$ at Ar(20)/BCl$_3$(80) gas mixing condition and substrate temperature of 8$0^{\circ}C$TEX>X>.

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