• Title, Summary, Keyword: X-ray Photoelectron Spectroscopy

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Magnetic and structural properties of ultrathin magnetic films: Ni/Pt(111)

  • Nahm, T.U.;Oh, S.J.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.17-20
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    • 2003
  • We have studied magnetic and structural properties of ultrathin Ni films grown on PI(lII) surface using in situ surface magneto-optic Kerr effect and X-ray photoelectron spectroscopy. Perpendicular magnetic anisotropy was absent, and longitudinal Kerr signal was only detectable for Ni films thicker than 6 monolayers. Enhancement in longitudinal Kerr signal by 30% was achieved by post-annealing at temperatures below 800K, but upon annealing at 820K, surface alloy was formed. By using core-level binding-energy shifts, the composition was determined to be Ni 70 at. %.

A Study on Etching of Molybdenum by MERIE Metal Etcher (MERIE형 금속 식각기에 의한 몰리브덴 식각 연구)

  • 김남훈;김창일;권광호;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.34-38
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    • 1999
  • In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

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The Oxidized Surface of Stainless Steel 304 Analyzed with X-ray Photoelectron Spectroscopy (광전자 분광법으로 분석한 스테인레스 강 304의 산화 표면)

  • 이경철;함경희;안운선
    • Journal of the Korean institute of surface engineering
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    • v.24 no.3
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    • pp.144-150
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    • 1991
  • The stainless steel 304 oxidized at $70^{\circ}C$ in 2.5M CrO3/5.0M H2SO4 solution and at $200^{\circ}C$ , $300^{\circ}C$, and $400^{\circ}C$ in the air are analyzed with X-ray Photoelectron Spectroscopy (XPS) to obtain depth composition profile of the surface region. It is confirmed that the surface region has a quite different composition from that of the bulk. This is due to a difference in the outward diffusion rates of the oxidized species in the surface region. The order of diffusion rates is Fe > Cr > Ni in the experimental temperature range. In spite of the inferior rate of diffusion, Cr is enriched in the surface when it is oxidized in the CrO3/H2SO4 solution. This is due to preferential dissolution of oxidized Fe.

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The effect of chemical kinetics of slurry components on Cu CMP (화학반응속도가 Cu CMP에 미치는 영향)

  • Jung, Won-Duck;Chang, One-Moon;Park, Sung-Min;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.372-373
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    • 2006
  • Chemical kinetics affects Cu CMP results (removal rate, Non uniformity etc.) Because Cu is removed by chemical action. Key factors in chemical kinetics are process temperature and concentration of slurry components. In this study, Hydrogen peroxide and citric acid were selected as a oxidant and a complexing agent and Slurry were made by mixing this components. In order to study effects of Chemical Kinetics, X-ray photoelectron spectroscopy (XPS) were performed on Cu sample after etching test as concentration of citric acid and slurry temperature. Finally Cu CMP was performed as same conditions.

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Changes in the Surface Characteristics of Gas-atomized Pure Aluminum Powder during Vacuum Degassing

  • Yamasaki, Michiaki;Kawamura, Yoshihito
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • pp.1039-1040
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    • 2006
  • Vacuum degassing is essential in the preparation of RS P/M aluminum alloys to remove adsorbates and for the decomposition of hydrated-$Al_{2}O_3$ on the powder surface. Changes in the surface characteristics during vacuum degassing were investigated by X-ray photoelectron spectroscopy and temperature-programmed desorption measurement. Hydrated-$Al_{2}O_3$ decomposition to crystalline-$Al_{2}O_3$ and hydrogen desorption on the surface of argon gas-atomized aluminum powder occurred at 623 K and 725 K, respectively. This temperature difference suggests that the reaction converting hydrated-$Al_{2}O_3$ to crystalline-$Al_{2}O_3$ during vacuum degassing should be divided into the two reactions $"2Al+Al_{2}O_3{\cdot}3H_2O\;2Al_{2}O_3+6H_{surf}"and"6H_{surf}3H_2"$.

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Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

  • Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.3
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    • pp.106-109
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    • 2011
  • We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

Materials Stabilized Liquid Crystal Molecules on Chemically Modulated Polystyrene Surface Using Various Ion Beam Exposure Time

  • Han, Jeong-Min;Hwang, Hyun-Suk
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.285-287
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    • 2010
  • This paper introduces homogeneous liquid crystal (LC) orientations on chemically modulated polystyrene (PS) surfaces using various ion beam (IB) exposure times. Transparent PS was replaced with conventional polyimide material. As a non-contact process, the IB bombardment process induced LC orientation parallel to the IB process. Through x-ray photoelectron spectroscopy, it was shown that the chemical compositional changes of the IB-irradiated PS surfaces were determined as a function of IB exposure time. Using this analysis, the optimal IB bombardment condition was determined at an IB exposure time of up to 15 seconds. Moreover, thermal stability on IB-irradiated PS surfaces were carried out which showed that a relatively high IB exposure time induced a thermally stable LC alignment property.

The study of oxygen molecules on Pt (111) surface with high resolution x-ray photoemission spectroscopy

  • Kim, Yong-Su;Bostwick, Aaron;Rotenberg, Eli;Ross, Philip N.;Hong, Soon-Cheol;Mun, Bong-Jin Simon
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.61-61
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    • 2010
  • By using high resolution x-ray photoelectron spectroscopy, we show that inelastic scattering of photoelectron at low temperature (30K~50K) generates two kinds of oxygen species on Pt (111) surface. Intense synchrotron radiation source dissociates oxygen molecules into chemisorbed atomic oxygen and induces the formation of PtO on surface. Estimated coverage of dissociated atomic oxygen is 0.5 ML, suggesting possible formation of p($2{\times}1$) surface structure, while PtO coverage shows saturation coverage of 0.5 ML. Molecular oxygen dosed at 30 K undergoes thermally activated transition from physisorbed to chemisorbed state at around 40K.

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Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon;Seo, Yong-Jin;Ko, Pil-Ju;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.164-168
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    • 2005
  • Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.216-220
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    • 2013
  • The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.