• Title, Summary, Keyword: X-ray Photoelectron Spectroscopy

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방사광을 이용한 표면분석 기술: XPS

  • Park, Yong-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.80-80
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    • 2012
  • 본 튜토리알에서는 표면 및 물질분석 기술로 널리 사용되고 있는 X-ray 광전자분광기술(X-ray Photoelectron Spectroscopy)의 원리와 광전자분광계를 구성하는 요소, 그리고 XPS를 이용하여 시료로부터 얻어낼 수 있는 정보가 무엇인지 등에 대해서 알아본다.

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Study on Etch Characteristics of BTO Thin Film by using $Cl_2$/Ar Inductively Coupled Plasma ($Cl_2$/Ar ICP 플라즈마를 이용한 BTO박막의 식각 특성 연구)

  • Kim, Man-Su;Min, Nam-Ki;Lee, Hyun-Woo;Choi, Bok-Gil;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.177-178
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    • 2007
  • 본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

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Top-Emitting Organic Light-Emitting Diodes Based on the Interfacial Electronic Structures of Bis(8-Quinolinolato)Aluminum (III)/Barium

  • Im, Jong-Tae;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.5-6
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    • 2007
  • 반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

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Characterization and Conversion Electron Mössbauer Spectroscopy of HoMn1-x-FexO3 Thin Films by Pulsed Laser Deposition (PLD를 이용한 HoMn1-x-FexO3 박막 제조 및 후방 산란형 뫼스바우어 분광 연구)

  • Choi, Dong-Hyeok;Shim, In-Bo;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.18-21
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    • 2007
  • The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

Preparation and characterization of magnetic nanoparticles with two kinds of core/shell structures (핵/껍질 구조를 가진 두 종류의 자기 나노입자의 제조와 특성비교)

  • 고영재;손인호;김영국;동성용;이근진;박규섭
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.87-92
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    • 2001
  • Magnetic Fe-Co(C) nanocapsules and Fe-Co nanoparticles were prepared by arc-discharge in two kinds of atmospheres, i.e. methane and a mixture of ($H_2$+Ar), respectively. Characterization and magnetic properties of this two kinds of ultrafine particles were investigated systematically by means of X-ray diffraction, Mssbauer spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, energy disperse spectroscopy analysis, chemical analysis, oxygen determination and magnetization measurement. Effects of carbon element, decomposed from a methane atmosphere in carbon arc process, on phase structures, magnetic states and surface characterization were studied in comparison to that of Ar element. Two ultrafine particles showed a little difference in the weight ratio of (Fe/co) and the size for Fe-Co nanoparticles was about two times bigger than Fe-Co(C) nanocapsules. The saturation magnetization of Fe-Co (C) nanocapsules was about 8% higher than that of Fe-Co nanoparticles while their phase constitutions were similar. Although no carbon could be detected by XRD measurement because of extremely thin shells on the surfaces of the cores, it is still believed that they are carbon and oxygen layers.

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The Etching Characteristics of Cr Films by Using $Cl_{2}O_{2}$ Gas Mixtures ($Cl_{2}O_{2}$ 가스에 의한 크롬 박막의 식각 특성 고찰)

  • 박희찬;강승열;이상균;최복길;권광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.634-639
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    • 2001
  • We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

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XPS study of sapphire substrate surface nitridated by plasma activated nitrogen source (Plasma로 활성화된 질소 원자를 사용한 사파이어 기판 표면의 저온 질화처리의 XPS 연구)

  • 이지면;백종식;김경국;김동준;김효근;박성주
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.320-327
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    • 1998
  • The chemical aspects of nitridated surface of sapphire(0001) have been studied by X-ray photoelectron spectroscopy. Nitridated layer was formed by remote plasma enhanced-ultrahigh vacuum deposition at a low temperature range. It was confirmed that this nitridated surface was mainly consists of AIN layer. The relative amounts of nitrogen reacted with AL on the sapphire surface and their surface morphology were investigated with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) as a function of radio-frequency power, reaction temperature, and reaction time. The amounts of atomic nitrogen activated by plasma which was subsequently incorporated into sapphire were increased with RF power. But the amounts of nitrogen reacted with AI in sapphire was initially increased and then remained constant. However, the relative amounts of AIN were nearly constant with irrespective of nitridation temperature and time. Furthermore, a depth porfile of nitridated layer with XPS showed that the nitridated surface consisted of three layers with different stoichiometry.

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Property Variation of Diamond-like Carbon Thin Film According to the Annealing Temperature (열처리에 따른 Diamond-like Carbon (DLC) 박막의 특성변화)

  • Park, Ch.S.;Koo, K.H.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.49-53
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    • 2011
  • Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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