• Title, Summary, Keyword: Transparent conducting oxide

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A Study on the Improvement of Efficiency by Scribing Transparent Conducting Oxide of Dye-sensitized Solar Cell (염료감응형 태양전지의 투명 전극 식각을 통한 효율 향상 연구)

  • Seo, Hyun-Woong;Son, Min-Kyu;Lee, Kyoung-Jun;Kim, Jeong-Hoon;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • pp.416-418
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    • 2008
  • Dye-sensitized solar cell using transparent conducting oxide as electrode has large resistance such as surface resistance, charge transportation impedance in counter electrode and electrolyte, impedance between each interface. Among that resistances, surface resistance of transparent conducting oxide is relatively large. So the change of transparency has a large effect on internal resistance of dye-sensitized solar cell. Consequently, that change cause to increase or decrease the conversion efficiency. We tried to reduce the surface resistance by laser-scribing. The active area is seperated from total transparent conducting oxide by Nd:YAG laser-scribing. As a result, we achieved the improvement of efficiency about 7% and 11% in case of $0.25cm^2$ and $1.00cm^2$ dye-sensitized solar cells.

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Characterization of conducting aluminium doped zinc oxide (ZnO:Al) thin films deposited on polymer substrates (폴리머 기판위에 증착된 ZnO:Al 전도막의 특성연구)

  • Koo, Hong-Mo;Kim, Se-Hyun;Park, Jong-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.535-538
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    • 2004
  • Zinc Oxide (ZnO) films have attracted considerable attention for transparent conducting films, because of their high conductivity, good optical transmittance from UV to near IR as well as a low-cost fabrication. To increase the conductivity of ZnO, doping of group III elements (Al, Ga, In and B) has been carried out. Transparent conducting films have been applied for optoelectric devices, the development of the transparent conducting thin films on flexible light-weight substrates are required. In this research, the transparent conducting ZnO thin films doped with Aluminum (Al) on polymer substrates were deposited by the RF magnetron suputtering method, and the structural, optical and electrical properties were investigated.

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Effects of the Ag Layer Embedded in NIZO Layers as Transparent Conducting Electrodes for Liquid Crystal Displays

  • Oh, Byeong-Yun;Heo, Gi-Seok
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.33-36
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    • 2016
  • In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

Electrical properties of Indium Zinc Tin tummy Transparent Conducting Oxide which doped impurities (Indium Zinc Tin turnary Transparent Conducting Oxide에서의 dopant 첨가에 따른 전기적 특성)

  • Seo, Han;Park, Jung-Ho;Choi, Byung-Hyun;Jy, Mi-Jung;Kim, Sea-Gee;Ju, Byeong-Kwon;Hong, Sung-Pyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.183-183
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    • 2009
  • 본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.

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Properties of Nb-doped TiO2 Transparent Conducting Oxide Film Fabricated by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 합성된 Nb-doped TiO2 투명전극의 특성)

  • Kim, Min-Young;Cho, Mun-Seong;Lim, Dong-Gun;Park, Jae-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.3
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    • pp.204-208
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    • 2012
  • $TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

Electrical Properties of the Transparent Conducting Oxide Layers of Al-doped ZnO and WO3 Prepared by rf Sputtering Process

  • Gang, Dong-Su;Kim, Hui-Seong;Lee, Bung-Ju;Sin, Baek-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.316-316
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    • 2014
  • Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

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Transparent Conducting Multilayer Electrode (GTO/Ag/GTO) Prepared by Radio-Frequency Sputtering for Organic Photovoltaic's Cells

  • Pandey, Rina;Kim, Jung Hyuk;Hwang, Do Kyung;Choi, Won Kook
    • Journal of Sensor Science and Technology
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    • v.24 no.4
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    • pp.219-223
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    • 2015
  • Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • Journal of Applied Reliability
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    • v.16 no.1
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Effect of process parameters of antimony doped tin oxide films prepared on flexible substrate at room temperature

  • Lee, Seong-Uk;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.175-175
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    • 2010
  • Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

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Preparation of Transparent and Conducting Tin Oxide Films by the Ultrasonic Spray Pyrolysis (초음파분무열분해에 의한 투명전도성 산화주석막의 제조)

  • Kim, Sang-Kil;Yoon, Cheonho
    • Applied Chemistry for Engineering
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    • v.9 no.2
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    • pp.214-219
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    • 1998
  • The transparent conducting tin oxide films were deposited on g1ass substrates by the ultrasonic spray pyrolysis. Examined were effects of deposition parameters on the electrical resistance, optical transmittance, crystal structure, and thickness of tin oxide films. As both the deposition time and concentration of tin(IV) chloride increase, the deposited tin oxide films exhibited the decrease of electrical resistance and optical transmittance in the visible and near infrared region. With increasing heat-treatment temperature in air, the deposited tin oxide films showed the enhanced electrical resistance and optical transmittance. This study suggests that the ultrasonic spray pyrolysis may be a promising deposition technique effectively to prepare transparent conducting films of good quality in a single step.

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