• Title, Summary, Keyword: Transmission Gate

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Computer Simulation Study of the Hydrostatic Transmission Applied to the Rack-Bar Type Sluice Gate (래크바형 수문권양기에 적용된 정유압장치의 컴퓨터 시뮬레이션에 의한 작동특성 연구)

  • Lee, S.R.
    • Transactions of The Korea Fluid Power Systems Society
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    • v.6 no.2
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    • pp.14-21
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    • 2009
  • The typical hydraulic hoisting system of the rack-bar type sluice gate is composed of a hydraulic supply unit using an uni-directional pump, a direction control valve, a hydraulic motor, a counter balance valve, and flow control valves. Here, the hydrostatic transmission is applied to the hoisting system of rack-bar type sluice gate to simplify the operation of gate such that the upward and downward direction of gate is simply controlled by the direction of pump rotation. The new hydraulic hoisting system is composed of a bi-directional pump, a hydraulic motor, two counter balance valves, two check valves, two pilot-operated check valves, two relief valves and a shuttle valve. The characteristics of a suggested system are analyzed by computer simulations.

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Development of the Rack-Bar Type Sluice Gate Applying the Hydrostatic Transmission (정유압식 래크바형 수문권양기의 개발)

  • Lee, Seong-Rae
    • 유공압시스템학회:학술대회논문집
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    • pp.86-92
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    • 2010
  • The typical hydraulic hoisting system of the rack-bar type sluice gate is composed of a hydraulic supply unit using an uni-directional pump, a direction control valve, a hydraulic motor, a counter balance valve, and flow control valves. Here, the hydrostatic transmission is applied to the hoisting system of rack-bar type sluice gate to simplify the operation of gate such that the upward and downward direction of gate is simply controlled by the direction of pump rotation. The new hydraulic hoisting system is composed of a bi-directional pump, a hydraulic motor, a counter balance valve, two check valves, two pilot-operated check valves, two relief valves and a shuttle valve. The characteristics of a suggested system are analyzed by computer simulations and experiments.

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Development of the Rack-Bar Type Sluice Gate Applying the Hydrostatic Transmission (정유압식 래크바형 수문권양기의 개발)

  • Lee, Seong-Rae
    • Transactions of The Korea Fluid Power Systems Society
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    • v.7 no.4
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    • pp.15-22
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    • 2010
  • The typical hydraulic hoisting system of the rack-bar type sluice gate is composed of a hydraulic supply unit using an uni-directional pump, a direction control valve, a hydraulic motor, a counter balance valve, and flow control valves. Here, the hydrostatic transmission is applied to the hoisting system of rack-bar type sluice gate to simplify the operation of gate such that the upward and downward direction of gate is simply controlled by the direction of pump rotation. The new hydraulic hoisting system is composed of a bi-directional pump, a hydraulic motor, a counter balance valve, two check valves, two pilot-operated check valves, two relief valves and a shuttle valve. The characteristics of a suggested system are analyzed by computer simulations and experiments.

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CMOS Transmission Gate Circuits Dissipating Leakage Power Only (누설전력소비만을 갖는 CMOS 전달게이트 회로)

  • Park, Dae-Jin;Chung, Kang-Min
    • Proceedings of the IEEK Conference
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    • pp.467-468
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    • 2008
  • In this paper, a logic family, the transmission gate CMOS(TG CMOS) is proposed, which combines the transmission gate and pass transistor resulting in a different configuration from traditional full CMOS. In the simulation, basic cells comprising this logic are designed and their dynamic responses are analyzed. The simulation shows their performance is exceeding that of conventional full CMOS.

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A Study on an Transmission Right Issuance Quantity Assessment Method by using Power Transfer Distribution Factor(PTDF) under FlowGate Right(FGR) (FlowGate Right(FGR) 도입 시 Power Transfer Distribution Factor(PTDF)를 이용한 송전권 계약용량 산정 방법 연구)

  • Baeck, Woong-Ki;Bang, Young-Sun;Chun, Yeong-Han;Kim, Jung-Hoon;Kwak, No-Hong;Lee, Baek-Seok
    • Proceedings of the KIEE Conference
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    • pp.861-863
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    • 2005
  • LMP based congestion management method is suggested as an effective tool, because network congestion can be handled by energy price. It is now being widely used in the North American Electricity Markets. Among them, FGR(Flow-gate rights) is considered to be appropriate for our system, as power flow through the congested line is unidirectional and congestion occurs in the known place. In the CBP market, hedging through transmission right is not necessary even though location pricing system is adopted, because there are no risks in the energy price. Rut, transmission rights should be adopted in the advanced market. Key issue when implementing FGR is how to decide transmission right issuance quantify. This paper deals with a method to decide transmission right issuance quantity by using power. Transfer Distribution Factor(PTDF).

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Design of ISL(Intergrated Schottky Logic) for improvement speed using merged transistor (속도 향상을 위한 병합트랜지스터를 이용한 ISL의 설계)

  • 장창덕;백도현;이정석;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.21-25
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    • 1999
  • In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. In the result, we get amplitude of logic voltage of 200mV, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26ns in AC characteristic output of Ring-Oscillator connected Gate.

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Transmission Line Analysis of Accumulation Layer in IEGT

  • Moon, Jin-Woo;Chung, Sang-Koo
    • Journal of Electrical Engineering and Technology
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    • v.6 no.6
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    • pp.824-828
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    • 2011
  • Transmission line analysis of the surface a cumulation layer in injection-enhanced gate transistor (IEGT) is presented for the first time, based on per-unit-length resistance and conductance of the surface layer beneath the gate of IEGT. Lateral electric field on the accumulation layer surface, as well as the electron current injected into the accumulation layer, is governed by the well-known wave equation, and decreases as an exponential function of the lateral distance from the cathode. Unit-length resistance and conductance of the layer are expressed in terms of the device parameters and the applied gate voltage. Results obtained from the experiments are consistent with the numerical simulations.

Design of a high speed and high intergrated ISL(Intergrated Schottky Logic) using a merged transistor (병합트랜지스터를 이용한 고속, 고집적 ISL의 설계)

  • 장창덕;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.415-419
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    • 1999
  • Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

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Consideration of CCD Gate Structure in the Determination of the Point Spread Function of Yohkoh Soft X-Ray Telescope (SXT)

  • Shin, Jun-Ho;Sakurai, Takashi
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.1
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    • pp.93.2-93.2
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    • 2012
  • Point Spread Function (PSF) is one of the most important optical characteristics for describing the performance of a telescope. And a concept of subpixelization is inevitable in evaluating the undersampled PSF (Shin and Sakurai 2009). Then, the internal structure of Yohkoh SXT CCD pixel is not uniform: For the top half of pixel area, the X-ray should pass a so-called gate structure where the charges are transferred to an output amplifier. This gate structure shows energy-dependent sensitivity (Tsuneta et al. 1991). For example, for Al-K (8.34 A) X-ray emission, the transmission of the polysilicon gate is about 0.9. Also, for the peak coronal response of the SXT thin filters, around 17 angstrom (0.729 keV), the transmission of the gate is about 0.6, falling off sharply towards longer wavelengths. It should be noted that this spectrally dependent non-uniform response of each CCD pixel will certainly have a noticeable effect on the properties of the PSF at longer wavelengths. Therefore, especially for analyzing the undersampled PSF of low energy source, a careful consideration of non-uniform internal pixel structure is required in determining the shape of the PSF core. The details on the effect of gate structure will be introduced in our presentation.

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