• Title/Summary/Keyword: Solar cell

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Investigation of Ni/Cu Solar Cell Using Selective Emitter and Plating (선택도핑에 도금법으로 Ni/Cu 전극을 형성한 태양전지에 관한 연구)

  • Kwon, Hyuk-Yong;Lee, Jae-Doo;Lee, Hae-Seok;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.1010-1017
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    • 2011
  • The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

Thin Film Si-Ge/c-Si Tandem Junction Solar Cells with Optimum Upper Sub- Cell Structure

  • Park, Jinjoo
    • Current Photovoltaic Research
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    • v.8 no.3
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    • pp.94-101
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    • 2020
  • This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of Eg profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (Jsc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

Electric-field induced si-graphene heterostructure solar cell using top gate

  • Won, Ui-Yeon;Yu, U-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.287.2-287.2
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    • 2016
  • Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.

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Development of EPS System Based on DSP for Solar Cell Output Characteristics (태양전지 출력특성을 갖는 DSP기반 EPS시스템 개발)

  • Jeong, B.H.;Kang, B.H.;Kim, H.S.;Choe, G.H.;Choi, Y.H.;Kim, J.C.
    • Proceedings of the KIPE Conference
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    • 2005.07a
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    • pp.523-525
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    • 2005
  • In this paper, electronic-controlled power supply(EPS) system for solar cell characteristic is proposed to solve various problems and to achieve reliable experimental result on photovoltaic system. This system emulates the solar cell output characteristics, and it can substitute solar cell in laboratory experiment system. New model for solar cell is proposed to realize the EPS system for solar cell, which is based on the interpolation. Both simulation and experiment are executed to show the validity of the proposed EPS system.

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Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

  • Yoon, Min-Seok;Shim, Young Bo;Han, Young-Geun
    • Journal of the Optical Society of Korea
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    • v.19 no.2
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    • pp.199-205
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    • 2015
  • We investigated the effects of the thickness and doping concentration in p- and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p- and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

Modeling and Power Analysis of Solar Cell Array for Kompsat 1 (다목적실용위성 1호 태양전지 모델링 및 궤도특성 해석)

  • Jeong,Gyu-Beom;Lee,Sang-Uk;Choe,Wan-Sik
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.31 no.1
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    • pp.67-72
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    • 2003
  • In this paper, solar cell array of KOMPSAT 1 was modeled and analyzed. The modeling results of solar array were achieved by neural algorithm, which is a powerful nonlinear system modeling tool. Using solar cell array modeling, the solar cell array was analyzed and verified by simulation considering solar cell data of KOMPSAT 1. The characteristics curves and power generation of the solar array are analyzed by using the modeling.

Study on GaAs/Ge Solar Cell for Space Use (우주선용 GaAs/Ge 태양전지에 관한 연구)

  • 이만근;박이준;최영희;전흥석
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1993.05a
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    • pp.53-59
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    • 1993
  • The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.

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Development of 15W Portable lighting system using solar cell (Solar cell을 이용한 휴대용 15W lighting system 개발)

  • Kim, Jin-Hong;Song, Sang-Bin;Kim, Gi-Hoon;Cheon, Woo-Young
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.107-112
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    • 2008
  • Solar Cell을 이용한 15W 휴대용 조명 시스템을 개발하기 위하여, 휴대용에 적합한 solar cell을 선정하고, Solar Cell을 충전하기 위한 태양광 궤적 변화에 대한 Simulation을 행하였으며, 1W 백색 LED 6EA를 사용하여 휴대용 LED Lighting System을 개발하였다. LED Lighting System은 solar cell 충방전 회로 및 LED SMPS 구동회로 설계, 글레어차단을 위한 리플렉터 설계, 방열 설계 및 기구 구조 설계를 통하여 개발되었으며, 직접 시제품을 제작하고 그 성능을 측정하였다.

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Metal-assisted grown Si films and semiconducting nanowires for solar cells

  • Kim, Jun-Dong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.13-13
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    • 2010
  • The solar energy conversion will take 10 % global energy need by 2033. A thin film type solar cell has been considered as one of the promising candidates for a large area applicable solar cell fabrication at a low cost. The metal-assisted growth of microcrystalline Si (mc-Si) films has been reported for a quality Si film synthesis at a low temperature. It discusses the spontaneous growth of a Si film above a metal-layer for a thin film solar cell. Quite recently, a substantial demand of nanomaterials has been addressed for cost-effective solar cells. The nanostructure provides a large photoactive surface at a fixed volume, which is an advantage in the effective use of solar power. But the promising of nanostructure active solar cell has not been much fulfilled due mainly to the difficulty in architecture of nanostructures. We present here the Si nanowire (SiNW)-embedded Schottky solar cell. Multiple SiNWs were connected to two different metals to form a Schottky or an ohmic contact according to the metal work function values. It discusses the scheme of rectifying contact between metals and SiNWs and the SiNW-embedded Schottky solar cell performances.

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A Wireless Identification System Using a Solar Cell and RF Transceivers (솔라셀과 RF송수신기를 이용한 무선인식장치)

  • Lee, Seong-Ho
    • Journal of Sensor Science and Technology
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    • v.25 no.5
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    • pp.337-343
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    • 2016
  • In this paper, we newly introduce a wireless identification system using a solar cell and RF transceivers. The reader sends interrogating signal to a transponder using LED visible light, and the transponder responds to the reader using RF signal. The transponder consists of a solar cell, an amplifier, a microprocessor, and an RF transmitter. The solar cell receives the visible light from the reader and generates current to supply electric power to the other devices in the transponder. At the same time, the solar cell detects interrogating signal in the reader light. The microprocessor senses the interrogating signal and generates a responding signal. The RF transmitter radiates the responding signal to the reader. The transponder is a passive circuit because it operates without external power. In experiments, the maximum read distance between a reader and a transponder was about 1.6 meter.