• Title/Summary/Keyword: Solar cell

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A Study on Low Power Energy Transfer Circuits of the Non Contact Method by means of Solar Generation (태양광 발전에 의한 비접촉 방식 저 전력 에너지 전송회로에 관한 연구)

  • Hwang, Lark-Hoon;Na, Seung-Kwon;Kim, Jong-Rae;Choi, Gi-Ho;Kim, Jin-Seon
    • Journal of Advanced Navigation Technology
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    • v.18 no.1
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    • pp.35-43
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    • 2014
  • In this paper, it is about to non-contact wireless power transmission according to various conditions of self induction principle between the two planar coils at a transmission unit and a receiving unit based on the theory of wireless power transmission. The experiments are occurred in order to power transfer of noncontact method from designed wireless circuits in the primely coil and secondary coil, and the applying to Half Bridge Resonant converter transmission unit and receiving unit. and that were able to prepared circumstance to calculate of the output voltage and power source. The main power of the inductive coupling the resonant converter at the transmission unit is converted electrical energy using the solar cell module and artificial light source (halogen lamp) as a replace light and received 24 V power supply from solar power was used a input power source for the wireless power transmission device. Experimental results, to received of power is used to illuminate the lighting and to charge the battery in receiving circuit.And the wireless power transmission efficiency measured at the output side of the transmission unit is obtained about 70% to 89% compared to input power of receiving unit.In addition, efficiency were tested through ID verification method and comparing the phase difference between the voltage when foreign substances interfere with wireless power transmission.

Plasmonic Enhanced Light Absorption by Silver Nanoparticles Formed on Both Front and Rear Surface of Polycrystalline Silicon Thin Film Solar Cells

  • Park, Jongsung;Park, Nochang;Varlamov, Sergey
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.493-493
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    • 2014
  • The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

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Fabrication of Microwire Arrays for Enhanced Light Trapping Efficiency Using Deep Reactive Ion Etching

  • Hwang, In-Chan;Seo, Gwan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.454-454
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    • 2014
  • Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

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Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조)

  • Seok, Hye-Won;Kim, Sei-Ki;Lee, Hyun-Seok;Lim, Tae-Young;Hwang, Jong-Hee;Choi, Duck-Kyun
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

Effect of Salt Concentration on Electrolyte Membranes for Dye Sensitized Solar Cells (염료감응형 태양전지를 위한 고분자 전해질막에서의 이온농도의 효과)

  • Kwon, So-Young;Yun, Mi-Hye;Cho, Doo-Hyun;Jung, Yoo-Young;Koo, Ja-Kyung
    • Membrane Journal
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    • v.21 no.3
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    • pp.213-221
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    • 2011
  • Using poly(ethylene oxide) (PEO) as a polymer host, poly(ethylene glycol) (PEG) as a plasticizer, potassium iodide and iodine as sources of $I^-/I_3^-$, polymer electrolyte membranes were prepared. Based on the polymer electrolytes, solid-state dye-sensitized solar cell (DSSC)s were fabricated. The content of PEG in the electrolyte was controlled to be 95%. The mole number of KI per 1 mole of EO ([KI]/[EO] ratio) in the electrolyte was changed to be 0.022, 0.044, 0.066 and 0.088. The electrolyte membrane showed wax phase in ambient temperature. The ionic conductivity increased with increasing KI content to reach the maximum value at which [KI]/[EO] ratio is 0.066. After the maximum value, the ionic conductivity decreased with increasing KI content. In the case of DSSC, the Voc decreased continuously with increasing KI content in the polymeric electrolyte membrane. The $J_{SC}$ increased with increasing KI content to show maximum value at which [KI]/[EO] ratio is 0.044. In the higher KI content region, $J_{SC}$ value decreased with increasing KI content.

The characteristics of dye-sensitized solar cells using carbon nanotube in working and counter electrodes (작업전극과 상대전극에 탄소나노튜브를 이용한 염료감응 태양전지의 특성연구)

  • Kim, Bora;Song, Suil;Lee, Hak Soo;Cho, Namjun
    • Analytical Science and Technology
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    • v.27 no.6
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    • pp.308-313
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    • 2014
  • The effect of electrochemical characteristics of dye-sensitized solar cells (DSSC) upon employing multi-wall carbon nanotube (MWCNT) on both working electrode and counter electrode were examined with using EIS, J-V curves and UV-Vis absorption spectrometry. When 0.1 wt% of MWCNT was employed in the $TiO_2$-MWCNT composit on working electrode, the energy conversion efficiency increased about 12.5% compared to the $TiO_2$ only working electrode. The higher light conversion efficiency may attribut to the high electrical conductivity of MWCNT in $TiO_2$-MWCNT composite which improves the electron transport in the working electrode. However, higher amount of MWCNT than 0.1 wt% in the $TiO_2$-MWCNT composite decreases the light conversion efficiency, which is mainly ascribed to the decreased transmittance of light by MWCNT and to the decreased adsorption of dye onto $TiO_2$. The MWCNT employed counter electrode exhibited much lower light conversion efficiency of DSSC than the Pt-counter electrode, while the MWCNT-Pt counter electrode showed similar in light conversion efficiency to that of Pt-counter electrode.

The Survey and Analysis of Technology Level on Korea's Key Green Technologies and its Implications (우리나라의 중점녹색기술수준 조사.분석 및 시사점)

  • Hong, Mi-Young;Hwang, KiHa;Hong, Jung Suk;Lee, Kyong-Jae
    • Journal of Korea Technology Innovation Society
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    • v.16 no.2
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    • pp.476-505
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    • 2013
  • Korea government has established and pursued green technology development strategy as the core of green growth, for example, withdrawal of 27 key green technologies through 'green technology research and development comprehensive plan ('09.1)' since 'low carbon green growth' was proposed as a new national development paradigm. In this study, we performed the Delphi survey of technology levels of 131 strategic product and service technologies derived from 27 key green technologies, utilizing large-scale group of green technology experts. The survey of technology level among main five nations resulted in the world's leading nation (US) versus EU (99.4%), Japan (95.3%), Korea (77.7%), China (67.1%) and Korea was ranked fourth. The technology gap between the world's leading nation (US) and Korea is 4.1 years behind EU (3.9 years) and Japan(3.1 years), but 2.1 years earlier than China. For our nation, key green technologies with high technology level are 'improved light water reactor (90.1%)', 'silicon-based solar cell (85.0%)', 'high-efficiency low-emission car (84.5%)' in order. Depending on the investment type of key green technologies, technology level is represented as short-term (85.0%), mid-term (77.3%) and long-term (71.1%) in order, indicating that lower technology level requires mid-to long-term investment and that the investment type is set appropriate.

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Radiation detector material development with multi-layer by hetero-junction for the reduction of leakage current (헤테르접합을 이용한 누설전류 저감을 위한 다층구조의 방사선 검출 물질 개발)

  • Oh, Kyung-Min;Yoon, Min-Seok;Kim, Min-Woo;Cho, Sung-Ho;Nam, Sang-Hee;Park, Ji-Goon
    • Journal of the Korean Society of Radiology
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    • v.3 no.1
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    • pp.11-15
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    • 2009
  • In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

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Discharge Characteristics of Plasma Jet Doping Device with the Atmospheric and Ambient Gas Pressure (플라즈마 제트 도핑 장치의 대기 및 기체의 압력 변화에 대한 방전 특성)

  • Kim, J.G.;Lee, W.Y.;Kim, Y.J.;Han, G.H.;Kim, D.J.;Kim, H.C.;Koo, J.H.;Kwon, G.C.;Cho, G.S.
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.301-311
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    • 2012
  • Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

Influence of Nanostructured TiO2 Electrode Fabricated with Acid-treated Paste on the Photovoltaic Efficiency of Dye-Sensitized Solar Cells (산처리된 페이스트로 제조한 나노 구조체 TiO2 전극이 염료감응형 태양전지의 효율에 미치는 영향)

  • Lee, Jae-Wook;Hwang, Kyung-Jun;Roh, Sung-Hee;Kim, Sun-Il
    • Applied Chemistry for Engineering
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    • v.18 no.4
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    • pp.356-360
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    • 2007
  • Recently, dye sensitized solar cells (DSSCs) composed of nanoporous $TiO_2$, light-sensitive dyes, electrolytes, and counter electrode have been received much attention. Nanostructured particles with higher surface area for the higher adsorption of Ru (II) dye are required to increase the quantity of light absorption. Also, it has been reported that the key factor to achieve high energy conversion efficiency in the photoelectrode of DSSC is the heat treatment of $TiO_2$ paste with acid addition. In this work, we investigated the influence of acid treatment of $TiO_2$ solar cell on the photovoltaic performance of DSSC. The working electrodes fabricated in this work were characterized by X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), field emission scanning electron microscope (FE-SEM), and atomic force microscope (AFM). In addition, the influence of nanostructured photoelectrode fabricated with the acid-treated paste on the energy conversion efficiency was investigated on the basis of photocurrent-potential curves. It was found that the influence of acid-treated paste on the photovoltaic efficiency was significant.