• Title/Summary/Keyword: Silica Slurry

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Mixed Nano Silica Colloidal Slurry for Reliability Improvement of Sapphire Wafer CMP Process (사파이어 웨이퍼 CMP 공정 신뢰성 향상을 위한 혼합 나노실리카 콜로이달 슬러리)

  • Chung, Chan Hong
    • Journal of Applied Reliability
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    • v.14 no.1
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    • pp.11-19
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    • 2014
  • A colloidal silica slurry has been manufactured by mixing nano silica powders having different grain size to improve the reliability of Sapphire wafer CMP process. The main reliability problem of CMP process such as the breaking of wafer can be prevented by reducing the size of particles in a slurry. While existing commercial colloidal silica slurries are usually made of single grain size silica powder of about 120nm, in the present study 40nm and 100nm silica powders are mixed to achieve a similar removal rate. The new colloidal silica slurry showed wafer removal rate of $3.04{\mu}m/120min$ while that of a commercial colloidal silica slurry was $3.03{\mu}m/120min$. The roughness was less than $4{\AA}$ and scratch was 0. It is also expected that the reduction of the size of nano silica particles can improve the dispersion stability and prolong the useful life of the slurry.

Aging Effects of Silica Slurry and Oxide CMP Characteristics (실리카 슬러리의 에이징 효과 및 산화막 CMP 특성)

  • 이우선;고필주;이영식;서용진;홍광준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.2
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    • pp.138-143
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    • 2004
  • CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

Chemical Mechanical Polishing Characteristics of Mixed Abrasive Silica Slurry (MAS) by adding of Manganese oxide (MnO2) Abrasive (산화망간이 첨가된 혼합 연마제 실리카 슬러리의 산화막 CMP 특성)

  • Seo, Yong-Jin
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1175-1181
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    • 2019
  • In this paper, we have studied the chemical mechanical polishing(CMP) characteristics of mixed abrasive silica slurry(MAS) retreated by adding of manganese oxide(MnO2) abrasives within 1:10 diluted silica slurry. A slurry designed for optimal performance should produce high removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The polishing performances of MnO2 abrasive-added MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared to original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, our proposed MnO2-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.

A Study on the Oxide CMP Characteristics using $ZrO_2$ -Diluted Silica Slurry($ZrO_2$ -DSS) ($ZrO_2$ - DSS의 CMP 특성에 관한 연구)

  • Lee, Sung-Il;Park, Sung-Woo;Lee, Woo-Sun;Seo, Yong-Jin
    • Proceedings of the KIEE Conference
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    • pp.85-86
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    • 2006
  • Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables arc relatively high because of expensive slurry. In this paper, in order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, abrasives were added in the diluted silica slurry (DSS) in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry (MAS) for the oxide CMP application.

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Methodological Study for Recycle of Chemical Mechanical Polishing Slurry (슬러리 Modification 에 대한 연구)

  • Park, Sung-Woo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.567-568
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    • 2006
  • To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

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Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

  • Cho, Kyu-Chul;Jeon, Hyeong-Tag;Park, Jea-Gun
    • Korean Journal of Materials Research
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    • v.16 no.5
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    • pp.308-311
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    • 2006
  • The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry (탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성)

  • 서용진;박창준;최운식;김상용;박진성;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.465-470
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    • 2003
  • The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

Effect of Alumina Addition tn the Silica Slurry on the Chemical Mechanical Polishing of Laugasite (실리카 슬러리에 첨가된 알루미나가 Langasite의 기계.화학적 연마에 미치는 영향)

  • 장영일;윤인호;임대순
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • pp.263-268
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    • 1999
  • Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

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Characteristic of Oxide CMP with the Various Temperatures of Silica Slurry (실리카 슬러리의 온도 변화에 따른 산화막의 CMP 특성)

  • Ko, Pil-Ju;Park, Sung-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Chang, Eui-Goo;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.707-710
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    • 2004
  • Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

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