• Title, Summary, Keyword: Si(111)

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Structural properties of GeSi/Si heterojunction compound semiconductor films by using SPE (SPE법을 통해 형성된 $Ge_xSi_{1-x}/Si$이종접합 화합물 반도체의 결정분석)

  • 안병열;서정훈
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.3
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    • pp.713-719
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    • 2000
  • In order to Prepare the$Ge_xSi_{1-x}/Si$(111) heterosructure by solid phase epitaxy (SPE), about 1000A of Au and about 1000A Ge were sequentially deposited on the Si(111) substrate. The resulting Ge/Au/Si(111) samples were isochronically annealed in the high vacuum condition. The behaviors of Au and Ge during thermal annealing and the structural Properties of $Ge_xSi_{1-x}$ films were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). The a-Ge/Au/Si(111) structure was converted to the Au/GeSi/Si(111) structure. Defects such as stacking faults, point defects and dislocations were found at the GeXSil-X(111) interface, but the film was grown epitaxially with the matching face relationship of $Ge_xSi_{1-x}/$(111)/Si(111). Twin crystals were also found in the $Ge_xSi_{1-x}/$(111) matrix.

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Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask (Pt 금속마스크를 이용하여 제작한 나노패턴 Si(111) 기판위에 성장한 GaN 박막 특성)

  • Kim, Jong-Ock;Lim, Kee-Young
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.67-71
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    • 2014
  • An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

Growth of Ti on Si(111)-)-$7{\times}7$ Surface and the Formation of Epitaxial C54 $TiSi_2$ on Si(111) Substrate (Si(111)-$7{\times}7$ 면에서 Ti 성장과 C54 $TiSi_2$/Si(111) 정합 성장에 관하여)

  • Kun Ho Kim;In Ho Kim;Jeoung Ju Lee;Dong Ju Seo;Chi Kyu Choi;Sung Rak Hong;Soo Jeong Yang;Hyung Ho Park;Joong Hwan Lee
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.67-72
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    • 1992
  • The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

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The change of alkali-metals/Si(111) surface structure and Investigation of desorption energy (알칼리금속/Si(111)표면에서의 구조변화 및 탈착에너지 조사)

  • Kwak, Ho-Weon;Jung, Sung-Min
    • Journal of the Korean Society of Industry Convergence
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    • v.6 no.3
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    • pp.201-205
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    • 2003
  • The effects of adsorption and desorption of alkali-metals on Si(111) surface were investigated by using AES and RHEED-system. The adsorption system is a fundamental interest because of its unique electronic properties such as measurement of work function change, adatom-core level shift. It was found that the growth node of K on Si(111) surface was layer by layer growth and the saturation coverage was 2.0ML at room temperature. Superstructure changes on Si(111) surface according to the alkali-metal thickness and substrate temperatures were accurately defined. By applying the isothermal desorption method, the desorption energies of Li/Si(111) and K/Si(111) surfaces was measured. On Li/Si(111) and K/Si(111) surfaces, the desorption energies were 3.07 eV, 2.19 eV respectively.

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Ca/Si(111)-2×1에서 에피성장을 통한 Si단결정 성장가능성에 관한 Si원자의 흡착과 확산에 대한 전산모사연구

  • Yeo, Gang-Mo;Jeong, Seok-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.127.1-127.1
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    • 2016
  • Si은 값싸고 넓은 시설기반을 갖추고 있어, 발전산업에서 태양광소자의 주원료로 널리 사용된다. 하지만 Si은 간접 띠틈을 Si의 특성을 개선하기 위해 최근 Si에 특정한 결함을 넣어 직접 띠틈으로 바꿔 광효율을 높이려는 시도가 있다. 2015년 초 Si단결정[111]으로 Seiwatz-chain 형태의 결함이 있다면 결함이 있는 Si(111)에 직접 띠틈이 생길 것 이라고 이론적으로 예상했다. 이러한 구조의 제작방법으로 Ca/Si(111)과 Si(111)을 접합 후 가열하여 Ca을 빼내는 방법을 제시했다[1]. 본 연구에서는 이 제작방법 외에 Ca/Si(111)-$2{\times}1$ 표면에서[2] 에피성장으로 결함이 유지된 Si단결정 형성가능성을 제일원리 계산을 통해 연구했다. 제일원리 계산방법으로는 VASP(Vienna Ab-initio Simulation Package)를 이용하였다. Si원자 한개, 두 개, 세 개가 흡착될 경우 원자당 흡착에너지는 각각 3.73 eV, 3.73 eV, 3.91 eV 였다. 따라서 Si원자는 무리형태로 흡착될 것으로 예상되어 결함을 유지하며 단결정으로 성장하기는 어려울 것으로 보인다.

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In situ Epitaxial Growth of the $TiSi_2$ on si(111)-7$\times$7 Substrate by Codeposition (동시증착에 의한 Si(111)-7$\times$7 기판 위에 $TiSi_2$ 에피택셜 성장)

  • 최치규;류재연;오상식;염병렬;박형호;조경익;이정용;김건호
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.405-413
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    • 1994
  • 초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

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Structural Characteristics of $Y_2O_3$ Films Grown on Differently Surface-treated Si(111) by Ultrahigh Vacuum Ionized Cluster Beam (UHV-ICB 방법으로 Si(111) 기판위에 성장된 $Y_2O_3$ 박막의 구조적 특성에 관한 연구)

  • Lee, Dong-Hun;Seong, Tae-Yeon;Jo, Man-Ho;Hwang, Jeong-Nam
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.528-532
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    • 1999
  • Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

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Formation of $CoSi_2$ Film and Double Heteroepitaxial Growth of $Si/epi-CoSi_2/Si$(111) by Solid Phase Epitaxy (고상 에피택시에 의한 초박막 $CoSi_2$ 형성과 $Si/epi-CoSi_2/Si$(111)의 이중헤테로 에피택셜 성장)

  • Choi, Chi-Kyu;Kang, Min-Sung;Moon, Jong;Hyun, Dong-Geul;Kim, Kun-Ho;Lee, Jeong-Yong
    • Korean Journal of Materials Research
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    • v.8 no.2
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    • pp.165-172
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    • 1998
  • Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.

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EC-STM Studies on Electrochemical Preparation of Si(111)-H Surfaces (Si(111)-H 표면의 전기화학적 제조에 관한 전기화학적 주사터널링현미경법 연구)

  • Bae, Sang-Eun;Lee, Chi-Woo
    • Journal of the Korean Electrochemical Society
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    • v.5 no.3
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    • pp.111-116
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    • 2002
  • Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.

Growth and Analyses of 3C-SiC(111)Thin Films on Si(111)Substrate Using Rapid Thermal Chemical Vapor Deposition (RTCVD법을 이용한 Si(111)기판 위에 3C-SiC(111) 박막의 성장 및 분석)

  • Seo, Yeong-Hun;Nam, Gi-Seok;Hwang, Yong-Gyu;Seo, Eun-Gyeong;Lee, Hyeong-Jae
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.472-478
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    • 1997
  • TMS(tetramethysilane, Si(CH$_{3}$)$_{4}$)를 이용하여 RTCVD(rapid thermal chemical vapor deposition)장치에서 Si(111) 기판 위에 $\beta$-SiC(111)를 성장시켰다. 실험변수로는 반응온도, TMS유량, 반응시간, H$_{2}$유량을 변화시켰으며, XRD, IR, SEM, RBS, TEM등을 이용하여 성장된 박막을 분석하였다. 성장된 박막은 crystallized Si, C또한 Si-H, C-H결합은 관찰할 수 없었으나 다결정이었다. TMS의 유량이 증가함에 따라, 성장온도가 감소함에 따라서 미려한 박막을 성장시킬 수 있었으며, 반응의 활성화에너지는 20kcal/molㆍK이었다.

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