• Title, Summary, Keyword: Semiconductor dosimeter

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A Study on the Presentation of Entrance Surface Dose Model using Semiconductor Dosimeter, General Dosimeter, Glass Dosimeter: Focusing on Comparative Analysis of Effective Dose and Disease Risk through PCXMC 2.0 based on Monte Carlo Simulation (반도체 선량계, 일반 선량계, 유리 선량계를 이용한 입사표면선량 모델 제시에 관한 연구: 몬테카를로 시뮬레이션 기반의 PCXMC 2.0을 통한 유효선량과 발병 위험도의 비교분석을 중심으로)

  • Hwang, Jun-Ho;Lee, Kyung-Bae
    • Journal of the Korean Society of Radiology
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    • v.12 no.2
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    • pp.149-157
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    • 2018
  • One of the purposes of radiation protection is to minimize stochastic effects. PCXMC 2.0 is a Monte Carlo Simulation based program and makes it possible to predict effective dose and the probability of cancer development through entrance surface dose. Therefore, it is especially important to measure entrance surface dose through dosimeter. The purpose of this study is to measure entrance surface dose through semiconductor dosimeter, general dosimeter, glass dosimeter, and to compare and analyze the effective dose and probability of disease of critical organs. As an experimental method, the entrance surface dose of skull, chest, abdomen was measured per dosimeter and the effective dose and the probability of cancer development of critical organs per area was evaluated by PCXMC 2.0. As a result, the entrance surface dose per area was different in the order of a general dosimeter, a semiconductor dosimeter, and a glass dosimeter even under the same condition. Base on this analysis, the effective dose and probability of developing cancer of critical organs were also different in the order of a general dosimeter, a semiconductor dosimeter, and a glass dosimeter. In conclusion, it was found that the effective dose and the risk of diseases differ according to the dosimeter used, even under the same conditions, and through this study it was found that it is important to present an accurate entrance surface dose model according to each dosimeter.

Implementation of Electronic Personal Dosimeter Using Silicon PIN Photodiode (실리콘 핀 포토다이오드를 이용한 능동형 방사선 피폭 전자선량계의 구현)

  • 이운근;백광렬;권석근
    • Journal of Institute of Control, Robotics and Systems
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    • v.9 no.4
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    • pp.296-303
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    • 2003
  • A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

Simulation and design of individual neutron dosimeter and optimization of energy response using an array of semiconductor sensors

  • Noushinmehr, R.;Moussavi zarandi, A.;Hassanzadeh, M.;Payervand, F.
    • Nuclear Engineering and Technology
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    • v.51 no.1
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    • pp.293-302
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    • 2019
  • Many researches have been done to develop and improve the performance of personal (individual) dosimeter response to cover a wide of neutron energy range (from thermal to fast). Depending on the individual category of the dosimeter, the semiconductor sensor has been used to simplify and lightweight. In this plan, it's very important to have a fairly accurate counting of doses rate in different energies. With a general design and single-sensor simulations, all optimal thicknesses have been extracted. The performance of the simulation scheme has been compared with the commercial and laboratory samples in the world. Due to the deviation of all dosimeters with a flat energy response, in this paper, has been used an idea of one semi-conductor sensor to have the flat energy-response in the entire neutron energy range. Finally, by analyzing of the sensors data as arrays for the first time, we have reached a nearly flat and acceptable energy-response. Also a comparison has been made between Lucite-PMMA ($H_5C_5O_2$) and polyethylene-PE ($CH_2$) as a radiator and $B_4C$ has been studied as absorbent. Moreover, in this paper, the effect of gamma dose in the dosimeter has been investigated and shown around the standard has not been exceeded.

Comparison of Dose Measurement of Glass Dose Meter, Semiconductor Dose Meter, and Area Dose Meter in Diagnostic X-ray Energy (진단영역 X선 에너지에서 유리선량계, 반도체선량계, 면적선량계의 선량 실측 비교)

  • Son, Jin-Hyun
    • Journal of radiological science and technology
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    • v.42 no.6
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    • pp.483-489
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    • 2019
  • This paper obtained and compared these dose values by setting and comparing the X-ray imaging conditions (tube voltage 60 kVp, 70 kVp, 80 kVp, tube current 10 mAs, 16 mAs and X-ray field size are 10 × 10 cm, 15 × 15 cm). Each dose value was measure 10 times and represented as an average value. The purpose of this experiment is to serve as a reference for the X-ray exposure of diagnostic areas according to the type of dosimeter and to help with another dose measurement. The results of the experiment showed very little difference between the glass dosimeter(GD) and semiconductor dosimeter values due to changes in tube voltage of 60, 70, 80 kVp, regardless of field sized, but for dose area product(DAP), the difference in dose value was significant according to field size.

A Methodology of Radiation Measurement of MOSFET Dosimeter (MOSFET 검출기의 방사선 측정 기법)

  • Lho, Young-Hwan;Lee, Sang-Yong;Kang, Phil-Hyun
    • Proceedings of the IEEK Conference
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    • pp.159-162
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    • 2009
  • The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

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Comparisons and Measurements the Dose Value Using the Semiconductor Dosimeter and Dose Area Product Dosimeter in Skull, Chest and Abdomen (두개부, 흉부, 복부검사 시 반도체 선량계와 면적 선량계를 이용한 선량 값의 측정 및 비교)

  • Kim, Ki-Won;Son, Jin-Hyun
    • Journal of radiological science and technology
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    • v.38 no.2
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    • pp.101-106
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    • 2015
  • Recently, There has been a growing interests in exposure dose to the patient who take a examination using radiation. The radiological technologists should be concerned about the exposure dose to patients and make an efforts to reduce the patient dose without decreasing the image quality. In the case of foreign, the exposure dose of general X-ray examination have been managed by standard value of exposure dose using dose area product (DAP) and entrance surface dose (ESD) dosimeter. This study is to compare DAP and ESD in skull anterior posterior (AP), chest posterior anterior (PA), and abdomen AP projections of phantom by using DAP and ESD dosimeter. In the results, there were no differences between DAP and ESD dosimeter.

The study of characteristics of II-VI group chemical semiconductor by the kVp variation to development X-ray dosimeter (X-ray dosimeter 개발을 위한 II-VI 족 화합물 반도체의 kVp 변화에 따른 특성 연구)

  • Eun, C.K.;Cho, S.Y.;Nam, S.H.
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.05
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    • pp.23-26
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    • 1997
  • In exposuring x-rays, we can adjust three variables of kVp, mA and sec. The kVp is one of main factors affecting x-ray quality -peneterability. And miliampere-seconds is directly proportional to x-ray quantity. In this paper, we detected voltage variation of CdS, II-VI group semiconductor compounds, by kVp as the fundamental experiments of designing x-ray dosimeter. We exposured x-ray on the material from 40 to 100 kVp by increasing 2kVp using Shimadazu TH-500-125 Radio-Tex cx-s x-ray machine. We fixed miliampere -seconds to 100mA and 0.2 sec. After acquiring the raw data, we plotted the graph of kVp and voltage variation and figured slope value of 0.093 by regression. The standard deviation of voltage to kVp was 0.22. For the future study, the mAs variation study will be needed to investigate the connections between kVp and mAs in order to design x-ray dosimeter.

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The Algorithm of the signal processing to develope X-ray dosimeter using CdS (CdS를 이용한 X-ray dosimeter 개발을 위한 신호처리 알고리즘)

  • Choi, H.H.;Nam, S.H.;Yook, I.S.;Kim, K.Y.;Yoon, S.J.
    • Proceedings of the KOSOMBE Conference
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    • v.1998 no.11
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    • pp.153-154
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    • 1998
  • As the fundamental study to set up the algorithm of the X-ray dosimeter, we obtained the data using the designed X-ray input circuit and the semiconductor sensor. We measured the data of the ten time in the various kVp, mA and sec and then the obtained each data is averaged. After the data obtained under the circumstances of total 600, these data saved the database. We developed the algorithm of the X-ray dosimeter using the saved data. Later the result of this study is so important to design X-ray dosimeter.

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A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

  • Lho, Young-Hwan
    • Journal of IKEEE
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    • v.15 no.2
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    • pp.143-148
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    • 2011
  • MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

Development of Electronic Personal Dosimeter with Hybrid Preamplifier using Semiconductor Detector (반도체 검출기를 이용한 Hybrid 전치증폭기형 전자식 개인선량계 개발)

  • Lee, B.J.;Kim, B.H.;Chang, S.Y.;Kim, J.S.;Rho, S.R.
    • Journal of Radiation Protection and Research
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    • v.27 no.1
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    • pp.51-57
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    • 2002
  • An electronic personal dosimeter(EPD) with hybrid type preamplifier adopting a semiconductor detector as a radiation detector has been developed, manufactured and test-evaluated. The radiation detection characteristics of this EPD has been performance-tested by using a reference photon radiation field. After several test-irradiations to a $^{137}Cs$ gamma radiation source the radiation detection sensitivity of this EPD appeared to be $3.8\;cps/Gy{\cdot}h^{-1}$. The linearity of radiation response was kept within 8% of the dose equivalent ranges of $10{\mu}Sv{\sim}4Sv$ and the angular dependence was under less than 4% in angles of ${\pm}60^{\circ}$. It was confirmed that the energy response range was in $60{\sim}1,250keV$ given in the ISO standard. This EPD satisfied the international criteria for the EPD in the mechanical and the environmental performance test for 9 test categories according to IEC 61526.