• Title/Summary/Keyword: Rapid Thermal Processing

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Control of Wafer Temperature Uniformity in Rapid Thermal Processing using an Optimal Iterative teaming Control Technique (최적 반복 학습 제어기법을 이용한 RTP의 웨이퍼 온도균일제어)

  • 이진호;진인식;이광순;최진훈
    • 제어로봇시스템학회:학술대회논문집
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    • pp.358-358
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    • 2000
  • An iterative learning control technique based on a linear quadratic optimal criterion is proposed for temperature uniformity control of a silicon wafer in rapid thermal processing.

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A robust controller design for rapid thermal processing in semiconductor manufacturing

  • Choi, Byung-Wook;Choi, Seong-Gyu;Kim, Dong-Sung;Park, Jae-Hong
    • 제어로봇시스템학회:학술대회논문집
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    • pp.79-82
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    • 1995
  • The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.

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Characteristics of CIGS Thin Film Photovoltaic Cells with a Change of Rising-Temperature Time in Rapid Thermal Processing (급속열처리장치 승온 조건에 따른 CIGS 박막 태양전지 특성 연구)

  • Jeong, Yong-Min;Park, Chan-Il;Cho, Geum-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.3
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    • pp.107-112
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    • 2013
  • Cu(In,Ga)$Se_2$ (CIGS) thin films were annealed on molybdenium/sodalime glass substrates of $300{\times}300mm^2$ by rapid thermal processing (RTP) with 2-step rising-temperature times in $N_2$ ambient. Morphological property, structural characteristics and chemical composition of the precursor of CIGS thin films were influenced directly with a change of $1^{st}$-step rising-temperature time in RTP whereas there is no significant difference with the different $2^{nd}$-step rising-temperature time (final crystallization temperature). The shorter $1^{st}$-step rising-temperature time in RTP obtained the higher photovoltaic cell efficiency from 7.469% to 8.479% even though the ideal composition in CIGS thin films could not be accoplished in this study.

The optimal paremeter design of rapid thermal processing to improve wafer temperature uniformity on the semiconductor manufacturing (반도체 공정에서 웨이퍼의 온도균일도향상을 위한 고속열처리공정기의 최적 파라미터 설계)

  • 최성규;최진영;권욱현
    • 제어로봇시스템학회:학술대회논문집
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    • pp.1508-1511
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    • 1997
  • In this paper, design parameters of Rapid Thermal Processing(RrW) to minimize the wafer tempera ture uniformity errors are proposed. 1,anip ling positions and the wafer height are important parameters for waf er temperature uniformity in R'I'P. We propose the method to seek lamp ling positions and the wafer height for optimal temperature uniformity. l'he ~~roposed method is applied to seek optimal lamp ling positions and the waf er height of 8 inch wafer. 'I'o seek the optimal lamp ling positions and the wafer height, we var\ulcorner. lamp ling 110s itions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programmi ng problem. Finally, it is shown that the wafer temperature uniformity in RI'I' designed by optimal prarneters is improved to comparing with Ii'l'P designed by the other method.

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Estimation of Temperature Distribution on Wafer Surface in Rapid Thermal Processing Systems (고속 열처리공정 시스템에서의 웨이퍼 상의 온도분포 추정)

  • Yi, Seok-Joo;Sim, Young-Tae;Koh, Taek-Beom;Woo, Kwang-Bang
    • Journal of Institute of Control, Robotics and Systems
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    • v.5 no.4
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    • pp.481-488
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    • 1999
  • A thermal model based on the chamber geometry of the industry-standard AST SHS200MA rapid thermal processing system has been developed for the study of thermal uniformity and process repeatability thermal model combines radiation energy transfer directly from the tungsten-halogen lamps and the steady-state thermal conducting equations. Because of the difficulties of solving partial differential equation, calculation of wafer temperature was performed by using finite-difference approximation. The proposed thermal model was verified via titanium silicidation experiments. As a result, we can conclude that the thermal model show good estimation of wafer surface temperature distribution.

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A study on the optimal parameter design of rapid thermal processing to improve wafer temperature uniformity (8인치 웨이퍼의 온도균일도향상을 위한 고속열처리공정기의 최적 파라미터에 설게에 관한 연구)

  • 최성규;최진영;권욱현
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.10
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    • pp.68-76
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    • 1997
  • In this paper, design parameters of rapid thermal processing(RTP) to minimize the wafer temperature uniformity errors are proposed. Lamp ring positions and the wafer height are important parameters for wafer temperature uniformity in RTP. We propose the method to seek lamp ring positions and the wafer gheight for optimal temperature uniformity. The proposed method is applied to seek optimal lamp ring positions and the wafer feight of 8 inch wafer. To seek the optimal lamp ring positions and the wafer height, we vary lamp ring positions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programming problem. Finally, it is shown that the wafer temperature uniformity in RTP designed by optimal problem. Finally, it is hsown that the wafer temperature uniformity is RTP designed by optimal parameters is improved to comparing with RTP designed by the other method.

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Low temperature UV-assisted rapid thermal processing of (Ba,Sr)$TiO_3$ thin films (저온에서 (Ba,Sr)$TiO_3$ 박막의 UV를 이용한 RTP에 관한 연구)

  • Cho, Kwang-Hwan;Kang, Chong-Yun;Yoon, Seok-Jin;Lee, Young-Pak
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.234-234
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    • 2008
  • Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

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Analysis of Temperature Distribution and slip in Rapid Thermal Processing (급속 열처리시 실리콘 웨이퍼의 온도분포와 슬립 현상의 해석)

  • Lee, Hyouk;Yoo, Young-Don;Earmme, Youn-Young;Shin, Hyun-Dong;Kim, Choong-Ki
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.4
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    • pp.609-620
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    • 1992
  • A numerical solution of temperature and thermally induced stress in a wafer during rapid thermal processing (R.T.P) is obtained, and an analysis of onset and propagation of slip is performed and compared with experiment. In order to calculate temperature distribution of a wafer in R.T.P system, heat conduction equation that incorporated with radiative and convective heat transfer model is solved, and the solution of the equation is calculated numerically using alternating direction implicit (A.D.I) method. In dealing with radiative heat transfer, a partially transparent body that absorbs the radiation energy is assumed and this transparent body undergoes multiple internal reflections and absorptions. Two dimensional (assuming plane stress) thermoelastic constitutive equation is used to calculate thermal stress induced in a wafer and finite element method is employed to solve the equation numerically. The stress resolved in the slip directions on the slip planes of silicon is compared with the yield stress of silicon in order to predict the slip. The result of the analysis shows that the wafer temperature at which slip occurs is affected by the heating rate of the R.T.P system. It is observed that once slip occurs in the wafer, the slip grows.

Bang-Bang plus PID Temperature Control Scheme for Rapid Thermal Processing (급속 열처리 공정을 위한 Bang-Bang/PID 온도제어기법)

  • Song, Tae-Seung;Lyu, Joon
    • Journal of IKEEE
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    • v.3 no.1
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    • pp.109-117
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    • 1999
  • This paper describes the quick and precise control of the wafer temperature essential in rapid thermal processing(RTP). The bang-bang plus PID controller structure is introduced to satisfy rapid ramp-up rate and reduce overshoot and steady state error. The controller employs the PID action when the magnitude of the error between reference signal and the output temperature signal is smaller than some prescribed value. To find PID gains, the plant(autoregressive) model is first identified and Kappa-Tau tuning rule is used. The developed controller is applied to experimental RTP apparatus, and performances are evaluated.

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