• Title, Summary, Keyword: Power MOSFET

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A Study on 600 V Super Junction Power MOSFET Optimization and Characterization Using the Deep Trench Filling (Deep Trench Filling 기술을 적용한 600 V급 Super Junction Power MOSFET의 최적화 특성에 관한 연구)

  • Lee, Jung-Hoon;Jung, Eun-Sik;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.4
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    • pp.270-275
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    • 2012
  • Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

The Process and Fabrication of 500 V Unified Trench Gate Power MOSFET (500 V급 Unified Trench Gate Power MOSFET 공정 및 제작에 관한 연구)

  • Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.720-725
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    • 2013
  • Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

Analysis of Electrical Characteristics of Shield Gate Power MOSFET for Low on Resistance (차폐형 게이트 구조를 갖는 전력 MOSFET의 전기적 특성 분석에 관한 연구)

  • Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.63-66
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    • 2017
  • This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

Analysis of The Electrical Characteristics of Power MOSFET with Floating Island (플로팅 아일랜드 구조의 전력 MOSFET의 전기적 특성 분석)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.4
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    • pp.199-204
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    • 2016
  • This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

Optimal Design of Trench Power MOSFET for Mobile Application

  • Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.195-198
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    • 2017
  • This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.

Design of Unified Trench Gate Power MOSFET for Low on Resistance and Chip Efficiency (낮은 온저항과 칩 효율화를 위한 Unified Trench Gate Power MOSFET의 설계에 관한 연구)

  • Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.713-719
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    • 2013
  • Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

Design of 80 V Grade Low-power Semiconductor Device (80 V급 저전력 반도체 소자의 관한 연구)

  • Sim, Gwan Pil;Ann, Byoung Sup;Kang, Ye Hwan;Hong, Young Sung;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.3
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    • pp.190-193
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    • 2013
  • Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

A Power MOSFET with Self Current Limiting Capability (전류 제한 능력을 갖는 전력 MOSFET)

  • 윤종만;최연익;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.10
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    • pp.25-34
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    • 1995
  • A new vertical power MOSFET with over-current protection capability is proposed. The MOSFET consists of main power MOSFET cell, sensing MOSFET cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the newly designed lateral bipolar transistor. Mixed-mode simulations proved that the overcurrent protection is achieved by the proposed MOSFET successfully with a small protection area less than 0.2 % of the total die area.

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Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance

  • Lho, Young-Hwan;Yang, Yil-Suk
    • ETRI Journal
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    • v.34 no.1
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    • pp.134-137
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    • 2012
  • Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

  • Lee, Byeong-Il;Geum, Jong Min;Jung, Eun Sik;Kang, Ey Goo;Kim, Yong-Tae;Sung, Man Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.263-267
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    • 2014
  • Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.