• Title, Summary, Keyword: Porous silicon MIS alcohol sensor

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Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon

  • Park, Kwang-Youl;Kang, Kyung-Suk;Kim, Seong-Jeen;Lee, Sang-Hoon;Park, Bok-Gil;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1232-1236
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

C-V Characteristics of Porous Silicon Alcohol Sensors with the Semi-transparent Electrode (반투명 전극으로 된 다공질 실리콘 알코올 가스 센서의 C-V 특성)

  • 김성진;이상훈
    • Proceedings of the IEEK Conference
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    • pp.1085-1088
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

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C-V Response Properties of Alcohol Vapor Sensors Based on Porous Silicon (다공질 실리콘 알코올 가스 센서의 C-V 응답 특성)

  • Kim, Seong-Jeen;Lee, Sang-Hoon;Choi, Bok-Gil;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.592-597
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    • 2004
  • Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.