• Title/Summary/Keyword: Plasma impedance monitoring

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In-situ Endpoint Detection for Dielectric Films Plasma Etching Using Plasma Impedance Monitoring and Self-plasma Optical Emission Spectroscopy with Modified Principal Component Analysis

  • Jang, Hae-Gyu;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.153-153
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    • 2012
  • Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

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Real-Time Small Exposed Area $SiO_2$ Films Thickness Monitoring in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis

  • Jang, Hae-Gyu;Nam, Jae-Uk;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.320-320
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    • 2013
  • Film thickness monitoring with plasma impedance monitoring (PIM) is demonstrated for small area $SiO_2$ RF plasma etching processes in this work. The chamber conditions were monitored by the impedance signal variation from the I-V monitoring system. Moreover, modified principal component analysis (mPCA) was applied to estimate the $SiO_2$ film thickness. For verification, the PIM was compared with optical emission spectroscopy (OES) signals which are widely used in the semiconductor industry. The results indicated that film thickness can be estimated by 1st principal component (PC) and 2nd PC. Film thickness monitoring of small area $SiO_2$ etching was successfully demonstrated with RF plasma harmonic impedance monitoring and mPCA. We believe that this technique can be potentially applied to plasma etching processes as a sensitive process monitoring tool.

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Modified Principal Component Analysis for In-situ Endpoint Detection of Dielectric Layers Etching Using Plasma Impedance Monitoring and Self Plasma Optical Emission Spectroscopy

  • Jang, Hae-Gyu;Choi, Sang-Hyuk;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.182-182
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    • 2012
  • Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

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Modified Principal Component Analysis for Real-Time Endpoint Detection of SiO2 Etching Using RF Plasma Impedance Monitoring

  • Jang, Hae-Gyu;Kim, Dae-Gyeong;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.32-32
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    • 2011
  • Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

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Plasma Impedance Monitoring with Real-time Cluster Analysis for RF Plasma Etching Endpoint Detection of Dielectric Layers

  • Jang, Hae-Gyu;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.123.2-123.2
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    • 2013
  • Etching endpoint detection with plasma impedance monitoring (PIM) is demonstrated for small area dielectric layers inductive coupled plasma etching. The endpoint is determined by the impedance harmonic signals variation from the I-V monitoring system. Measuring plasma impedance has been examined as a relatively simple method of detecting variations in plasma and surface conditions without contamination at low cost. Cluster analysis algorithm is modified and applied to real-time endpoint detection for sensitivity enhancement in this work. For verification, the detected endpoint by PIM and real-time cluster analysis is compared with widely used optical emission spectroscopy (OES) signals. The proposed technique shows clear improvement of sensitivity with significant noise reduction when it is compared with OES signals. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as end point detection.

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Real Time Endpoint Detection in Plasma Etching Using Decision Making Algorithm (플라즈마 식각 공정에서 의사결정 알고리즘을 이용한 실시간 식각 종료점 검출)

  • Noh, Ho-Taek;Park, Young-Kook;Han, Seung-Soo
    • Journal of IKEEE
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    • v.20 no.1
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    • pp.9-15
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    • 2016
  • The endpoint detection (EPD) is the most important technique in plasma etching process. In plasma etching process, the Optical Emission Spectroscopy (OES) is usually used to analyze plasma reaction. And Plasma Impedance Monitoring (PIM) system is used to measure the voltage, current, power, and load impedance of the supplied RF power during plasma process. In this paper, a new decision making algorithm is proposed to improve the performance of EPD in SiOx single layer plasma etching. To enhance the accuracy of the endpoint detection, both OES data and PIM data are utilized and a newly proposed decision making algorithm is applied. The proposed method successfully detected endpoint of silicon oxide plasma etching.

Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

  • Lee, Honyoung;Jang, Haegyu;Lee, Hak-Seung;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.142.2-142.2
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    • 2015
  • Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.

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