• Title, Summary, Keyword: Pd germanide Schottky diodes

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Analysis of Thermal Stability and Schottky Barrier Height of Pd Germanide on N-type Ge-on-Si Substrate (N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석)

  • Oh, Se-Kyung;Shin, Hong-Sik;Kang, Min-Ho;Bok, Jeong-Deuk;Jung, Yi-Jung;Kwon, Hyuk-Min;Lee, Ga-Won;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.271-275
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    • 2011
  • In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.