• Title, Summary, Keyword: PECVD(Plasma enhanced vapor deposition)

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Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source

  • Choi, Min-Jun;Kwon, O Dae;Choi, Sang Dae;Baek, Ju-Yeoul;An, Kyoung-Joon;Chung, Kwun-Bum
    • Applied Science and Convergence Technology
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    • v.25 no.4
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    • pp.73-76
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    • 2016
  • Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

Fundamental Study of CNTs Fabrication for Charge Storable Electrode using RF-PECVD System

  • Jung, Ki-Young;Kwon, Hyuk-Moon;Ahn, Jin-Woo;Lee, Dong-Hoon;Park, Won-Zoo;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.7
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    • pp.8-13
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    • 2009
  • Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.

Deposition Behaviors and Electrical Properties of Sb-doped $SnO_2$ Films by Plasma Enhanced Chemical Vapor Deposition (PECVD법에 의해 제조된 Sb-doped $SnO_2$ 박막의 증착거동 및 전기적 특성)

  • 김근수;서지윤;이희영;김광호
    • Journal of the Korean Ceramic Society
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    • v.37 no.2
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    • pp.194-200
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    • 2000
  • Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

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Study of I layer deposition parameters of deposited micro-crystalline silicon by PECVD at 27.12MHz (27.12MHz PECVD에 의해 증착된 uc-Si의 I층 공정 파라미터 연구)

  • Lee, Kise;Kim, Sunkue;Kim, Sunyoung;Kim, Sangho;Kim, Gunsung;Kim, Beomjoon
    • 한국신재생에너지학회:학술대회논문집
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    • pp.66.1-66.1
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    • 2010
  • Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

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Characterization of Low-Temperature Graphene Growth with Plasma Enhanced Chemical Vapor Deposition

  • Ma, Yifei;Kim, Dae-Kyoung;Xin, Guoqing;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.421-421
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    • 2012
  • Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

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The study on the $SiO_2$ film non-uniformity by Plasma Enhanced Chemical Vapor Deposition (PECVD로 증착된 $SiO_2$의 non-uniformity 특성 연구)

  • Ham, Yong-Hyun;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.73-73
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    • 2008
  • In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

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Electrical Properties of Diamond-like Carbon Thin Film synthesized by PECVD (PECVD로 합성한 다이아몬드상 카본박막의 전기적 특성)

  • Choi, Won-Seok;Park, Mun-Gi;Hong, Byung-You
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.973-976
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    • 2008
  • In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. We examined the effects of the RF power on the electrical properties of the DLC films. The films were deposited at several RF powers ranging from 50 to 175 W in steps of 25 W. The leakage current of DLC films increased at higher deposition RF power. And the resistivities of DLC films grown at 50 W and 175 W were $5\times10^{11}$ ${\Omega}cm$ and $2.68\times10^{10}$ ${\Omega}cm$, respectively.

Synthesis of Diamond-Like Carbon Films on a TiO₂ Substrate by DC-Discharge Plasma Enhanced Chemical Vapor Deposition

  • 구수진;김창민;지종기
    • Bulletin of the Korean Chemical Society
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    • v.16 no.9
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    • pp.813-818
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    • 1995
  • A diamond-like carbon (DLC) film was produced on a TiO2 substrate using a plasma enhance chemical vapor deposition (PECVD) method. The CH4-H2 plasma was produced by applying 400 V DC. The DLC film with the best crystalline structure was obtained when the concentration of CH4 in H2 was 0.75 percent by volume and total pressure was 40 torr. The presence of the diamond structure was confirmed by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy methods. It was found that the diluting gas H2 played an important role in producing a DLC film using a PECVD method.

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Low Temperature Polycrystalline Silicon Deposition by Atmospheric Pressure Plasma Enhanced CVD Using Metal Foam Showerhead (다공성 금속 샤워헤드가 적용된 상압플라즈마 화학기상증착법을 이용한 저온 다결정 실리콘 증착 공정)

  • Park, Hyeong-Gyu;Song, Chang-Hoon;Oh, Hoon-Jung;Baik, Seung Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.344-349
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    • 2020
  • Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.