• Title, Summary, Keyword: ONO

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Spatial Distribution of Localized Charge Carriers in SONOS Memory Cells

  • Kim Byung-Cheul
    • Journal of information and communication convergence engineering
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    • v.4 no.2
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    • pp.84-87
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    • 2006
  • Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

Spatial Distribution of Injected Charge Carriers in SONOS Memory Cells

  • Kim Byung-Cheul;Seob Sun-Ae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.894-897
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    • 2006
  • Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.

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Application Review of Portable Slip Meter(ONO.PPSM) (휴대형 미끄럼시험기 (ONO.PPSM)의 적용성 검토)

  • Baek, Koen-Hyuk;Shin, Yoon-Ho;Choi, Soo-Kyung
    • Proceedings of the Korean Institute of Building Construction Conference
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    • pp.219-223
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    • 2009
  • This paper is the result of investigation of ONO PPSM(ONO PORTABLE SLIP METER) by way of experiment to see the validity as a slip meter, ONO PPSM is a portable slip meter which was made up for the weak points of O-Y PSM(ONO-YOSHIOKA PULL SLIP METER) which takes an accurate measurement of the slip resistance but very heavy and hard to operate. In order to know the stability of the measurement result of ONO PPSM, we measured the slip resistance against 4 different kind of floor materials. As a result of this, we found out that the coefficient of variability of CSR' is less than 0.05. Also, we verified the relation between CSR' and CSR. more specifically by doing the slip test against 7 different kinds of inorganic matter floor materials. We increased the usability of ONO PPSM as a slip meter by suggesting the method of sharing the evaluation index of slip of CSR' and C.S.R.

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Effective grafting method for Korean jujube nursery tree

  • Park, Hee-Seung;Kim, Yong-Koo;Chung, Kyu-Hwan;Ahn, Young-Hee
    • Journal of Environmental Science International
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    • v.12 no.2
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    • pp.119-124
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    • 2003
  • An effective grafting method for jujube nursery trees was developed to shorten the operation time, improve the percentage of "takes" and shoot emergence, and form the better graft union. Out of 7 grafting methods the splice, modified scion Ono graft and the bark graft showed relatively short operation time during the grafting operation comparing to the modified rootstock Ono graft or the chip budding. Among these methods, the bark graft demonstrated 100% "takes", but the modified scion Ono graft or the standard Ono graft showed 58.3% of "takes". The percentages of the vegetative shoot emergence were 100% fir the bark graft, 70% f3r the modified scion Ono graft and lower emergence percent for the rest grafting methods. The union tissue formation for the modified scion Ono graft, the bark graft, or the whip-and-tongue graft was significantly larger than the standard Ono graft or the splice graft. In a close examination of the cross sectional areas of the graft union formation through the microscope, the bark graft was superior, the standard Ono graft was inferior and rest of the grafting methods were intermediate.ing methods were intermediate.

Development of Calibration Equation of Portable Slip Meter(ONO·PPSM) through Comparative test of O-Y·PSM and ONO·PPSM (경사인장형 미끄럼시험기(O-Y·PSM)와의 비교실험을 통한 휴대형 미끄럼시험기(ONO·PPSM)의 교정식 작성)

  • Shin, Yoon-Ho;Choi, Soo-Kyung
    • Journal of the Korea Institute of Building Construction
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    • v.9 no.5
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    • pp.155-161
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    • 2009
  • This paper is the result of an investigation of a PORTABLE SLIP METER(ONO PPSM) by means of an experiment to determine its validity as a slip meter. ONO PPSM is a portable slip meter that was designed to address the weak points of PULL SLIP METER(O-Y PSM), which can be used to obtain an accurate measurement of slip resistance, but is very heavy and difficult to operate. To determine the stability of the measurement result of ONO PPSM, we measured the slip resistance against 4 different kind of floor materials. Our findings showed that the coefficient of variability of CSR' is less than 0.05. Furthermore, we verified the relationship between CSR' and CSR. More specifically, by performing the slip test against 7 different kinds of inorganic matter floor materials, we increased the usability of ONO PPSM as a slip meter by suggesting a method of sharing the evaluation index of slip of CSR' and C.S.R.

ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device

  • Kim, Sang-Yong;Kim, Il-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.1
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    • pp.16-19
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    • 2011
  • The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

Time Dependence of Charge Generation and Breakdown of Re-oxidized Nitrided Oxide (재산화 질화 산화막의 전하 생성과 항복에 대한 시간 의존성)

  • 이정석;이용재
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.2 no.3
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    • pp.431-437
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    • 1998
  • In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

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The Characteristics of MOSFET with Reoxidized Nitrided Oxide Gate Dielectrics (재산화된 질화 산화막을 게이트 절연막으로 사용한 MOSFET의 특성)

  • 양광선;박훈수;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.9
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    • pp.736-742
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    • 1991
  • N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

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Four Linyphiid Spiders (Araneae: Linyphiidae) New to Korea (접시거미류(거미목: 접시거미과)의 4 한국 미기록종)

  • Seo, Bo Keun
    • Korean journal of applied entomology
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    • v.52 no.3
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    • pp.171-179
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    • 2013
  • Four linyphiid species, Centromerus sylvasticus (Blackwall, 1841), Ryojius japonicus Saito and Ono, 2001, Sachaliphantes sachalinensis (Tanasevitch, 1988) and Tmeticus vulcanicus Saito and Ono, 2001, are reported new to the Korean fauna. Four genera, Centromerus Dahl, 1886, Ryojius Saito and Ono, 2001, Sachaliphantes Saaristo and Tanasevitch, 2004 and Tmeticus Menge, 1868, are also new to Korea. Diagnostic phototraphs and illustrations of species are provided.

Percentage of motile spermatozoa at 22 hours after swim-up procedure: An indicator for intracytoplasmic sperm injection?

  • Inoue, Taketo;Yonezawa, Yukiko;Sugimoto, Hironobu;Uemura, Mikiko;Ono, Yuri;Kishi, Junji;Emi, Nobuyuki;Ono, Yoshiyuki
    • Clinical and Experimental Reproductive Medicine
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    • v.43 no.3
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    • pp.157-163
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    • 2016
  • Objective: The decision to use in vitro fertilization (IVF), intracytoplasmic sperm injection (ICSI), or split insemination (IVF-ICSI) in the first cycle is based on the number of motile sperm. Hence, total fertilization failure (TFF) often occurs during IVF cycles, despite normozoospermia. To investigate whether the cumulative motile swim-up spermatozoa percentage at 22 hours post-insemination (MSPPI) is an indicator for ICSI, we analyzed TFF, fertilization, blastocyst development, chemical pregnancy, clinical pregnancy, and live birth rates. Methods: This prospective study was performed using data obtained from 260 IVF cycles. At 22 hours after insemination, the remaining swim-up spermatozoa were observed and divided into six groups according to MSPPI (<10%, 10% to <30%, 30% to <50%, 50% to <70%, 70% to <90%, and 90% to 100%). Results: Regardless of the ejaculated motile sperm concentration ($0.6-280{\times}10^6/mL$ motile spermatozoa), the incidence of TFF significantly increased when MSPPI was <10%, and the fertilization rate significantly decreased when MSPPI was <30%. We found that cumulative MSPPI correlated with the cumulative fertilization rate (Spearman correlation, 0.508, p<0.001). Regarding embryo development, we observed no significant differences in the rates of blastocyst development, chemical pregnancy, clinical pregnancy, or live birth among all groups. Conclusion: Our findings suggest that MSPPI is a viable indicator for split IVF-ICSI and ICSI. Taken together, by employing the MSPPI test in advance before IVF, ICSI, or split IVF-ICSI cycles, unnecessary split IVF-ICSI and ICSI may be avoided.