• Title, Summary, Keyword: Near-field scanning

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Theoretical and Experimental Investigation on the Probe Design of a Ridge-loaded Slot Type for Near-Field Scanning Microwave Microscope

  • Son, Hyeok-Woo;Kim, Byung-Mun;Hong, Jae-Pyo;Cho, Young-Ki
    • Journal of Electrical Engineering and Technology
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    • v.10 no.5
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    • pp.2120-2125
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    • 2015
  • In this paper, a rectangular waveguide probe with a ridge-loaded straight slot (RLSS) is presented for a near-field scanning microwave microscope (NSMM). The RLSS is located laterally at the end wall of the cavity and is loaded on double ridges in a narrow straight slot to improve the spatial resolution compared with a straight slot. The probe consists of a rectangular cavity with an RLSS and a feed section of a WR-90 rectangular waveguide. When the proposed NSMM is located at distance of 0.1mm in front of a substrate without patches or strips, the simulated full width at half maximum (FWHM) of the probe improve by approximately 31.5 % compared with that of a straight slot without ridges. One dimensional scanning of the E-plane on a sample under test was conducted, and the reflection coefficient of the near-field scanning probe is presented.

Polarization State of Scattered Light in Apertureless Reflection-mode Scanning Near-Field Optical Microscopy

  • Cai, Yongfu;Aoyagi, Mitsuharu;Emoto, Akira;Shioda, Tatsutoshi;Ishibashi, Takayuki
    • Journal of Magnetics
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    • v.18 no.3
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    • pp.317-320
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    • 2013
  • We studied the polarization state in an apertureless scanning near-field microscopy (a-SNOM) operating in reflection mode by using three-dimensional Finite-difference Time-domain (FDTD) method. As a result, the electric field around tip apex in the near-field region enhanced four times stronger than the incident light for ppolarization when the tip-sample separation was 10 nm. We find that the p- and s-polarization state is maintained for the scattered light when the probe is perpendicular to the sample. When the probe is not perpendicular to the sample, the polarization state of scattered light will rotate an angle that equals to the inclination angle of probe with p-polarization illumination. On the other hand, the polarization state will not rotate with s-polarization illumination.

Investigation of dark spots in OLEDs by using a near-field scanning microwave microscope (유기 발광소자내 dark spot의 마이크로파 근접장 현미경(near-field scanning microwave microscope)을 이용한 연구)

  • Yun, Soon-Il;Park, Mi-Hwa;Yoo, Hyeon-Jun;Lim, Eun-Ju;Kim, Joo-Young;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.147-150
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    • 2003
  • 유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alp3)/aluminum(Al)의 기본구조로 제작하였다. 비발광영역은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 0~15V 전압을 인가시키면서 인가 전압에 따른 dark spot 구조적 및 전기적 특성을 근접장 마이크로파 현미경 Image의 변화와 반사계수인 $S_11$측정을 통하여 연구하였다.

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Investigation of dark spots in OLEDs by using a near-field scanning microwave microscope (유기 발광소자내 dark spot의 마이크로파 근접장 현미경(near-field scanning microwave microscope)을 이용한 연구)

  • Yun, Soon-Il;Park, Mi-Hwa;Yoo, Hyeon-Jun;Lim, Eun-Ju;Kim, Joo-Young;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.984-987
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    • 2003
  • 유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alq3)/aluminum(Al) 의 기본구조로 제작하였다. Dark spot은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 $0{\sim}l5 V$ 까지 전압을 인가시키면서 인가 전압에 따른 전기적 특성을 근접장 마이크로파 현미경 image의 변화와 반사계수인 $S_{11}$ 측정을 통하여 연구하였다.

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Investigation of dark spots in organic light emitting diodes by using a near-field scanning microwave microscope (마이크로파 근접장 현미경을 이용한 유기 발광소자내 dark spot 연구)

  • Yun, Soon-Il;Yoo, Hyun-Jun;Park, Mi-Hwa;Kim, Song-Hui;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.494-497
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    • 2003
  • We report the dark spots in organic light emitting diodes by using a near-field scanning microwave microscope. Devices structure was glass / indium-tin-oxide(ITO) / copper-pthalocyiane(Cu-Pc) / tris-(8-hydroquinoline)aluminum(Alq3) / aluminum(Al). We made artificial dark spots by using a etching technique on a ITO substrate. Near-field scanning microwave microscope images and reflective coefficient of dark spots were measured and compared by the change of various applied voltage changes 0-15V.

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Design of low-cost near-field system using circular cylindrical scanning (원통주사법을 이용한 저비용 근역장 시스템 설계)

  • Ryu, Hong-Kyun;Song, Jin-Woo;Im, Young-Hoon;Cho, Yong-Heui
    • Proceedings of the Korea Contents Association Conference
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    • pp.280-284
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    • 2004
  • In this paper, we propose a low-cost near-field measurement system using a circular cylindrical scanning formula in order to obtain the radiation pattern of an AUT (Antenna Under Test). Near-field measurement is performed with the improved circular cylindrical scanning based on a planar scanning. We propose a novel method that replaces a network analyzer and we also offer the specifications of the near-field measurement system.

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Fabrication of Microcantilever Ultrasound Sensor and Its Application to the Scanning Laser Source Technique

  • Sohn, Young-Hoon;Krishnaswamy, Sridhar
    • Journal of the Korean Society for Nondestructive Testing
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    • v.25 no.6
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    • pp.459-466
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    • 2005
  • The scanning laser source (SLS) technique has been proposed recently as an effective way to investigate small surface-breaking defects, By monitoring the amplitude and frequency changes of the ultrasound generated as the SLS scans over a defect, the SLS technique has provided enhanced signal-to-noise performance compared to the traditional pitch-catch or pulse-echo ultrasonic methods, An extension of the SLS approach to map defects in microdevices is proposed by bringing both the generator and the receiver to the near-field scattering region of the defects, To facilitate near-field ultrasound measurement, silicon microcantilever probes are fabricated using microfabrication technique and their acoustical characteristics are investigated, Then, both the laser-generated ultrasonic source and the microcantilever probe are used to monitor near-field scattering by a surface-breaking defect.

Nondestructive measurement of sheet resistance of indium tin oxide(ITO) thin films by using a near-field scanning microwave microscope (근접장 마이크로파 현미경을 이용한 ITO 박막 면저항의 비파괴 관측 특성 연구)

  • Yun, Soon-Il;Na, Sung-Wuk;Yun, Young-Wun;You, Hyun-Jun;Lee, Yeong-Joo;Kim, Hyun-Jung;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.522-525
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    • 2004
  • ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

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Nondestructive measurement of sheet resistance of indium tin oxide(ITO) thin films by using a near-field scanning microwave microscope (근접장 마이크로파 현미경을 이용한 ITO 박막 면저항의 비파괴 관측 특성 연구)

  • Yun, Soon-Il;Na, Sung-Wuk;You, Hyun-Jun;Lee, Yeong-Joo;Kim, Hyun-Jung;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.1042-1045
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    • 2004
  • ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

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Enhancement Technologies of Signal-to-Noise Ratio in the Near-Field Scanning Systems (근거리 전자장 스캐닝 시스템의 잡음 대 성능 비 향상 기술)

  • Shin, Youngsan;Lee, Seongsoo
    • Journal of IKEEE
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    • v.22 no.2
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    • pp.510-513
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    • 2018
  • Recently, EMC (electromagnetic compatibility) becomes very important, which demands the measurement of EMI (electromagnetic interference) in the chip level. NFS (near-field scanning) systems defined in IEC 61967 and IEC 62508 are typical methods to analyze EMI in the chip level. As chips becomes faster, frequency measurement of NFS system should become wideband, but it degrades SNR (singal-to-noise ratio) of the NFP (near-field probe). This paper surveys SNR enhancement technologies of the NFS while maintaining wideband characteristics.