• Title, Summary, Keyword: Micro-electron column

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Scanning large area with a micro-electron column (마이크로 전자칼럼을 이용한 대면적 스캔)

  • Jang, Won-Kweon;Park, Seong-Soon;Kim, Ho-Seob
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.182-183
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    • 2007
  • In large area scanning with a micro-electron column, the optimal operation condition for the best visibility was studied. A micro-electron column can realize nearly unlimited scanning size with distribution of micro-electron columns, therefore applicable to large sized SEM or VSEM. The maximum scanning size with a micro-electron column was about $200cm^2$ when only one deflector was employed. However, a double deflector equipped micro-electron column provided 1.7 times larger scanning area with the same visibility as that of one deflector.

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Effect of the Off-axis distance of the Electron Emitting Source in Micro-column (마이크로 칼럼의 전자 방출원 위치 오차의 영향)

  • Lee, Eung-Ki
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.1
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    • pp.17-21
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    • 2010
  • Currently miniaturized electron-optical columns find their way into electron beam lithography systems. For better lithography process, it is required to make smaller spot size and longer working distance. But, the micro-columns of the multi-beam lithography system suffer from chromatic and spherical aberration, even when the electron beam is exactly on the symmetric axis of the micro-column. The off-axis error of the electron emitting source is expected to become worse with increasing off-axis distance of the focusing spot. Especially the electron beams far from the system optical axis have a non-negligible asymmetric intensity distribution in the micro-column. In this paper, the effect of the off-axis e-beam source is analyzed. To analyze this effect is to introduce a micro-column model of which the e-beam emitting source is aligned with the center of the electron beam by shifting them perpendicular to the system optical axis. The presented solution can be used to analysis the performance of the multi-electron-beam system. The performance parameters, such as the working distances and the focusing position are obtained by the computational simulations as a function of the off-axis distance of the emitting source.

Study on The Electron-Beam Optics in The Micro-Column for The Multi-Beam Lithography (다중빔 리소그래피를 위한 초소형 컬럼의 전자빔 광학 해석에 관한 연구)

  • Lee, Eung-Ki
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.43-48
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    • 2009
  • The aim of this paper is to describe the development of the electron-beam optic analysis algorithm for simulating the e-beam behavior concerned with electrostatic lenses and their focal properties in the micro-column of the multi-beam lithography system. The electrostatic lens consists of an array of electrodes held at different potentials. The electrostatic lens, the so-called einzel lens, which is composed of three electrodes, is used to focus the electron beam by adjusting the voltages of the electrodes. The optics of an electron beam penetrating a region of an electric field is similar to the situation in light optics. The electron is accelerated or decelerated, and the trajectory depends on the angle of incidence with respect to the equi-potential surfaces of the field. The performance parameters, such as the working distances and the beam diameters are obtained by the computational simulations as a function of the focusing voltages of the einzel lens electrodes. Based on the developed simulation algorithm, the high performance of the micro-column can be achieved through optimized control of the einzel lens.

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The Optimal Condition for Scanning Large Area with a Micro-electron-column (초소형 전자칼럼의 대면적 주사 적정조건)

  • Park, Sung-Soon;Kim, Ho-Seob;Jang, Won-Kweon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.481-486
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    • 2007
  • In large area scanning with a micro-electron-column, the operating condition for the best resolution was investigated in factors of working distance and field of view. The resolution of a test sample was dependent on electron beam energy and scanning field size. The best resolution with single deflector was obtained at 300 V and 30 mm in the electron emitting tip voltage and a working distance, respectively. The scanning area at that condition was $13.9{\times}13.9mm^2$, linearly increased with the working distance. Double deflector was employed for larger scanning size without increasing working distance, but showed only 1.7 times larger than that of single deflector, and the resolution was inverse proportional to the scanning size.

Optical Assembly and Fabrication of a Micro-electron Column (마이크로 전자렌즈의 광학적 정렬과 조립)

  • Park, Jong-Seon;Jang, Won-Kweon;Kim, Ho-Seob
    • Korean Journal of Optics and Photonics
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    • v.17 no.4
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    • pp.354-358
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    • 2006
  • A silicon lens and an insulator of pyrex, components of a micro-electron column, should be assembled by aligning and stacking simultaneously. An optical alignment of a diffraction beam and a laser welding were employed for the assembly of a source lens and an Einzel lens with precision within $\pm$4% for the maximum aperture size. The experimental condition for optical alignment and laser welding are explained. Anodic bonding was used to assist in stacking lenses. A micro-electron column of smaller apertures assembled with precise alignment and fabrication was tested with a current image of a Cu grid of 9$\mu$m in linewidth, and showed a higher resolution in acceleration mode.

Studies of electron emitters for a miniaturized electron column design (초소형 전자 칼럼 설계를 위한 전자 방출원 연구)

  • Kim, Young-Chul;Kim, Dae-Wook;Ahn, Seung-Joon;Kim, Ho-Seob;Jang, Won-Kweon
    • Korean Journal of Optics and Photonics
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    • v.13 no.4
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    • pp.314-318
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    • 2002
  • We examine the adjustment of the semiconvergent angle and current for the miniaturized micro column working at low voltage but producing maximized current. Our study shows that the minimum electron beam sizes are 10 ㎚ for the cold field emitter (CFE) and 20 ㎚ for the thermal field emitter (TFE) at a given condition.