• Title, Summary, Keyword: Metal electrode

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Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer

  • Kim, Keon-Soo;Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.270-271
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    • 2008
  • The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

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A Study of Power Output Characteristics for the Magnesium Metal Fuel Cell (마그네슘 금속연료전지의 출력특성에 관한 연구)

  • Kim, Yong-Hyuk
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.3
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    • pp.212-217
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    • 2014
  • The electric power output characteristics of magnesium fuel cell were investigated with regard to internal resistance. A equivalent circuit with the series-connected three internal resistance was introduced to analyze of the response to change of power. The power output analysis was employed in order to investigate the effect of internal resistances for the electrolyte concentration, air electrode area, Mg electrode area and distance between the electrodes. It was confirmed that internal resistance is generated by the electrolyte, air electrode and metal electrode, then those Internal resistances had a significant effect on the power output decrease. The power output was a maximum when the load resistance maches the internal resistance of the magnesium fuel cell. The fuel efficiency was only 50% at maximum power output. Higher fuel efficiency was achieved when the load resistance is greater than the internal resistance.

Top-emission Electroluminescent Devices based on Ga-doped ZnO Electrodes (Ga-doped ZnO 투명전극을 적용한 교류무기전계발광소자 특성 연구)

  • Lee, Wun Ho;Jang, Won Tae;Kim, Jong Su;Lee, Sang Nam
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.44-48
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    • 2017
  • We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

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Development of a New Copper(II) Ion-selective Poly(vinyl chloride) Membrane Electrode Based on 2-Mercaptobenzoxazole

  • Akhond, Morteza;Ghaedi, Mehrorang;Tashkhourian, Javad
    • Bulletin of the Korean Chemical Society
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    • v.26 no.6
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    • pp.882-886
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    • 2005
  • Copper(II) ion-selective PVC membrane electrode based on 2-mercaptobenzoxazole as a new ionophore and o-nitrophenyl octyl ether (o-NPOE) as plasticizer is proposed. This electrode revealed good selectivity for $Cu^{2+}$ over a wide variety of other metal ions. Effects of experimental parameters such as membrane composition, nature and amount of plasticizer, and concentration of internal solution on the potential response of $Cu^{2+}$ sensor were investigated. The electrode exhibits good response for $Cu^{2+}$ in a wide linear range of 5.0 ${\times}$ 10−.6-1.6 ${\times}$ $10^{-2}$ mol/L with a slope of 29.2 ${\pm}$ 2.0 mV/decade. The response time of the sensor is less than 10 s, and the detection limit is 2.0 ${\times}$ $10^{-6}$ mol/L. The electrode response was stable in pH range of 4-6. The lifetime of the electrode was about 2 months. The electrode revealed comparatively good selectivities with respect to many alkali, alkaline earth, and transition metal ions.

Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors (용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구)

  • Jeong, Young-Min;Song, Keun-Kyu;Woo, Kyoo-Hee;Jun, Tae-Hwan;Jung, Yang-Ho;Moon, Joo-Ho
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

Basic Studies on the Recovery of Zinc Metal from Wastewater by Cyclic Voltammetry (循環走査법에 의한 廢水로부터 亞鉛 回收에 관한 基礎 硏究)

  • 김진화;김동수
    • Journal of the Korean Institute of Resources Recycling
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    • v.10 no.3
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    • pp.29-36
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    • 2001
  • Cyclic voltammetry has been applied in the basic studies for the treatment and recovery of heavy metal component contained in wastewater by electrochemical reduction. The electrochemical behaviors of zinc ion for zinc metal electrode and carbon elec-trode were characterized by voltammograms and it was showed that zinc ions were reduced to metallic form below -0.76 V vs SHE. The change in the features of crystalline form of metallic zinc upon oxidation and reduction reaction was observed by X-ray diffraction method and the Am analysis verified that zinc ions were reduced to metal on copper plate. The results of this study were regarded to be important and meaningful in the treatment of heavy metal containing wastewater and, as a result, in the obtainment of metallic product by electrochemical method.

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DC Magnetron Sputtering of Cr/Cu/Cr Metal Electrodes for AC Plasma Display panel (DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조)

  • 남대현;이경우;박종완
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.704-710
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    • 2000
  • Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

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Study on the Electrochemical Characteristics of a EGaIn Liquid Metal Electrode for Supercapacitor Applications (수퍼커패시터 응용을 위한 EGaIn 액체 금속 전극의 전기화학 특성 연구)

  • SO, JU-HEE;KOO, HYUNG-JUN
    • Transactions of the Korean hydrogen and new energy society
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    • v.27 no.2
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    • pp.176-181
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    • 2016
  • Recent years, supercapacitors have been attracting a growing attention as an efficient energy storage, due to their long-lifetime, device reliability, simple device structure and operation mechanism and, most importantly, high power density. Along with the increasing interest in flexible/stretchable electronics, the supercapacitors with compatible mechanical properties have been also required. A eutectic gallium-indium (EGaIn) liquid metal could be a strong candidate as a soft electrode material of the supercapacitors because of its insulating surface oxide layer for electric double layer formation. Here, we report the electrochemical study on the charging/reaction process at the interface of EGaIn liquid metal and electrolyte. Numerical fitting of the charging current curves provides the capacitance of EGaIn/insulating layer/electrolyte (${\sim}38F/m^2$). This value is two orders of magnitude higher than a capacitance of a general metal electrode/electrolyte interface.

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

  • Kim, Sungjun;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.147-152
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    • 2016
  • In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.