• Title, Summary, Keyword: MOSFET dosimeter

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A Methodology of Radiation Measurement of MOSFET Dosimeter (MOSFET 검출기의 방사선 측정 기법)

  • Lho, Young-Hwan;Lee, Sang-Yong;Kang, Phil-Hyun
    • Proceedings of the IEEK Conference
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    • pp.159-162
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    • 2009
  • The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

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Determination of Dose Correction Factor for Energy and Directional Dependence of the MOSFET Dosimeter in an Anthropomorphic Phantom (인형 모의피폭체내 MOSFET 선량계의 에너지 및 방향 의존도를 고려하기 위한 선량보정인자 결정)

  • Cho, Sung-Koo;Choi, Sang-Hyoun;Na, Seong-Ho;Kim, Chan-Hyeong
    • Journal of Radiation Protection and Research
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    • v.31 no.2
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    • pp.97-104
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    • 2006
  • In recent years, the MOSFET dosimeter has been widely used in various medical applications such as dose verification in radiation therapeutic and diagnostic applications. The MOSFET dosimeter is, however, mainly made of silicon and shows some energy dependence for low energy Photons. Therefore, the MOSFET dosimeter tends to overestimate the dose for low energy scattered photons in a phantom. This study determines the correction factors to compensate these dependences of the MOSFET dosimeter in ATOM phantom. For this, we first constructed a computational model of the ATOM phantom based on the 3D CT image data of the phantom. The voxel phantom was then implemented in a Monte Carlo simulation code and used to calculate the energy spectrum of the photon field at each of the MOSFET dosimeter locations in the phantom. Finally, the correction factors were calculated based on the energy spectrum of the photon field at the dosimeter locations and the pre-determined energy and directional dependence of the MOSFET dosimeter. Our result for $^{60}Co$ and $^{137}Cs$ photon fields shows that the correction factors are distributed within the range of 0.89 and 0.97 considering all the MOSFET dosimeter locations in the phantom.

Radiological Characterization of the High-sensitivity MOSFET Dosimeter (고감도 MOSFET 선량계 방사선학적 특성 연구)

  • Cho Sung Koo;Kim Chan-Hyeong
    • Progress in Medical Physics
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    • v.15 no.4
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    • pp.215-219
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    • 2004
  • Due to their excellence for the high-energy therapy range of photon beams, researchers show increasing interest in applying MOSFET dosimeters to low- and medium-energy applications. In this energy range, however, MOSFET dosimeter is complicated by the fact that the interaction probability of photons shows significant dependence on the atomic number, Z, due to photoelectric effect. The objective of this study is to develop a very detailed 3-dimensional Monte Carlo simulation model of a MOSFET dosimeter for radiological characterizations and calibrations. The sensitive volume of the High-Sensitivity MOSFET dosimeter is very thin (1 ${\mu}{\textrm}{m}$) and the standard MCNP tallies do not accurately determine absorbed dose to the sensitive volume. Therefore, we need to score the energy deposition directly from electrons. The developed model was then used to study various radiological characteristics of the MOSFET dosimeter. the energy dependence was quantified for the energy range 15 keV to 6 MeV; finding maximum dependence of 6.6 at about 40 keV. A commercial computer code, Sabrina, was used to read the particle track information from an MCNP simulation and count the tracks of simulated electrons. The MOSFET dosimeter estimated the calibration factor by 1.16 when the dosimeter was at 15 cm depth in tissue phantom for 662 keV incident photons. Our results showed that the MOSFET dosimeter estimated by 1.11 for 1.25 MeV photons for the same condition.

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A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

  • Lho, Young-Hwan
    • Journal of IKEEE
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    • v.15 no.2
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    • pp.143-148
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    • 2011
  • MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

In-vivo Dose verification using MOSFET dosimeter (MOSFET 선량계를 이용한 In-vivo 선량의 확인)

  • Kang, Dae-Gyu;Lee, Kwang-Man
    • Journal of Sensor Science and Technology
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    • v.15 no.2
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    • pp.102-105
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    • 2006
  • In-vivo dosimetry is an essential tool of quality assurance programs in radiotherapy. The most commonly used techniques to verify dose are thermoluminescence dosimeter (TLD) and diode detectors. Metal oxide semiconductor field-effect transistor (MOSFET) has been recently proposed for using in radiation therapy with many advantages. The reproducibility, linearity, isotropy, dose rate dependence of the MOSFET dosimeter were studied and its availability was verified. Consequently the results can be used to improve therapeutic planning procedure and minimize treatment errors in radiotherapy.

The development of radiation lifetime measuring module for KAEROT/m2 (KAEROT/m2용 방사선 수명 측정모듈 개발)

  • Lee, Nam-Ho;Kim, Seung-Ho;Kim, Yang-Mo
    • Proceedings of the KIEE Conference
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    • pp.793-796
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    • 2003
  • The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

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Development of Radiation Dosimeter using Commercial p-MOSFET (상용 p-MOSFET을 이용한 방사선 선량계 개발)

  • Lee, Nam-Ho;Choi, Young-Su;Lee, Yong-B.;Youk, Geun-Uck
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.95-101
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    • 1999
  • When a metal oxide field effect transistor (MOSFET) is exposed to ionizing radiation, electron/hole pairs are generated in its oxide layer. The slow moving holes of them are trapped in the oxide layer of p-MOSFET and appear as extra charges that change the characteristics of the transistor. The radiation-induced charges directly impact the threshold (turn-on) voltage of the transistor. This paper describes the use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Two kinds of commercial p-type MOSFETS were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial p-MOSFETS as inexpensive radiation sensors for the first time.

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The development of a thermal neutron dosimetry using a semiconductor (반도체형 열중성자 선량 측정센서 개발)

  • Lee, Nam-Ho;Kim, Yang-Mo
    • Proceedings of the KIEE Conference
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    • pp.789-792
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    • 2003
  • pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

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Development of Radiation Dosimeter on P Channel Power MOSFET for $\gamma$-rays Real-Time Detection ($\gamma$선 실시간 검출을 위한 P채널 Power MOSFET 방사선 선량 시스템 개발)

  • Han, Sang-Hyun;Ji, Yong-Kun;Kwon, O-Sang;Min, Hong-Ki;Lee, Eung-Hyuk
    • Journal of Sensor Science and Technology
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    • v.9 no.3
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    • pp.213-223
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    • 2000
  • It is necessary that radiation dose would be detect exactly generated from facility related to nuclear, space, radiotherapy center, etc. This paper is to use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Commercial P Channel Power MOSFET(metal oxide field effect transistor) were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial P Channel Power MOSFET as inexpensive radiation sensors.

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